Abstract:With the development of power electronic converters (PECs), the thermal properties of high-power insulated gate bipolar transistor (IGBT) module are of significant importance in the reliability analysis, thermal design, and management of PECs. However, the present commonly used three-dimensional (3-D) thermal network model, still has limitations in accurately obtaining the junction temperature of IGBT modules. Particularly under high-temperature conditions, its performance is not ideal. This paper proposes a 3-D thermal network model considering the temperature effect of constituent materials, which has been efficiently obtained using four sets of finite element method (FEM) transient thermal simulation. By employing a two-step extraction (TPE) method, the thermal parameters including the conductance and capacitance of crucial nodes are fully identified based on the reconstruction matrix of virtual temperature. Additionally, the identified parameters are proven to reflect the temperature effect of materials with significant physical implications, which have also been discussed under various boundary conditions, e.g., temperature and cooling. The proposed 3-D temperature-dependent thermal model has been validated through FEM simulation and experiments, which shows satisfying performance in predicting the thermal behaviors under the whole-temperature conditions with an error within 1.2%.

A Coupled 3D Finite Element-Circuit Model for the Numerical Analysis of Small Time Scale Transients of an Insulated Gate Bipolar Transistor Power Electronics Device

A Coupled 3D FEM-Distribute Circuit Model for Numerical Analysis of Small Time Scale Transients of an IGBT based Inverter

Coupled Distribute Circuit-3D FEM Model to Simulate the Transient Electromagnetic Performances of IGBTs

An Improved Transient Electro-Thermal Model for Paralleled IGBT Modules

A Network Topological Approach-Based Transient 3-D Electrothermal Model of Insulated-Gate Bipolar Transistor

A Coupled Circuit-Ambipolar Diffusion Equation Model and Its Solution Methodology for Insulated Gate Bipolar Transistors

A Numerical Method for Solving the Physics-Based Model of IGBT with All Free-Carrier Injection Conditions in the Base Region

An Improved Analytical IGBT Model for Loss Calculation Including Junction Temperature and Stray Inductance

Thermal-Fluid Co-Simulation and Modelling of IGBT with Thermal Resistance Network

Dynamic Electrothermal Model of Paralleled IGBT Modules With Unbalanced Stray Parameters

A 2-D Nonlinear Ambipolar Diffusion Equation Model of an IGBT and Its Numerical Solution Methodology

Transient Electrothermal Analysis of Multilevel Interconnects in the Presence of ESD Pulses Using the Nonlinear Time-Domain Finite-Element Method

A Transient 3-D Thermal Modeling Method for IGBT Modules Considering Uneven Power Losses and Cooling Conditions

Transient Electrothermal Analysis of Interconnects in the Presence of a ESD pulse

A 3-D Temperature-Dependent Thermal Model of IGBT Modules for Electric Vehicle Application Considering Various Boundary Conditions

Physical Model Analysis During Transient for Series-Connected HVIGBTs

IGBT modeling for analysis of complicated multi-IGBT circuits

Advanced Electro-Thermal Spice Modelling of Large Power Igbts

IGBT Model for Analysis of Complicated Circuits

An On-State Analytical Model for the Trench Insulated Gate Bipolar Transistor (TIGBT)

High Order Distribute Circuit Model of Laminated Busbars and Its Order Reduction Techniques for Simulating Fast Turn-on and Turn-off Transients