IGBT modeling for analysis of complicated multi-IGBT circuits

Yi Deng,Zhengming Zhao,Liqiang Yuan
DOI: https://doi.org/10.1109/PEITS.2009.5407053
2009-01-01
Abstract:A new IGBT (Insulated Gate Bipolar Transistor) model for simulation of eomplicated multi-IGBT cireuits is presented. Based on the gate chargc and discharge behaviors of IGBT, it piecewise models the turn-on and -off transient oflGBT, and simulates the static characteristics with curve fitting method . With the kcy features of high simulation spccd, easy parameters extraction and clear physical meaning, the model is available for various IGBTs and system level circuits. This paper describes the structure and equivalent circuit of the model in detail, implements it with the simulation tool of PSIM package, and determines the parameters of the model for an IGBT of FF300R12ME3 as an example. The accuracy of the model is verified by the comparison between the simulated and experimental results. ©2009 IEEE.
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