A Circuit Simulation Model for an Uitra-fast IGBT and Analysis of Parameter Sensitivity

Aimin Li,Xiangning He,Zhaoming Qian
1995-01-01
Abstract:Based on existing built-in models of PSpice, by the composite model principle, a composite Insulated Gate Bipolar Transistor (IGBT) model for an ultra-fast IGBT is presented Comparison between measurement and simulation results shows good agreement in transient and steady-state behaviour of the IGBT Parametric sentive analysis of this model is performed, and validity of the composite model is discussed.
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