Abstract:This paper presents a carrier-based continuous analytic I-V model for long channel undoped (lightly doped) Ultra-Thin-Body Silicon-on-insulator (UTB-SOI) MOSFETs. It is based on the solution of Poisson-Boltzmann equation, and the current continuity equation of Pao-Sah current formulation in terms of the mobile carrier concentration under an appropriate boundary approximation. The model is continuous and valid for all the operation regions (linear, saturation, sub-threshold) and traces the transition between them. This preliminary model has been verified by comparing with long channel results generated by two-dimensional simulator. The predicted I-V characteristics also show in a good agreement with two-dimensional numerical simulations for all ranges of gate and drain voltages, proving the validity of the analytical model. All these indicate that this model will be an ideal core model for UTB MOSFET modelling if the appropriate second-order effects such as quantum mechanical effect, doping profile effect, short-channel effects, and poly-depletion effect are integrated into it.

An approximate carrier-based compact model for fully depleted surrounding-gate MOSFETs with a finite doping body

An approximate carrier-based compact model for fully depleted surrounding-gate MOSFETs with finite doping body

A charge-based compact model for arbitrary doped cylindrical surrounding-gate MOSFETs

An Exact Analytic Model of Undoped Body MOSFETs using the SPP Approach

A Charge-Based Model for Long-Channel Cylindrical Surrounding-Gate MOSFETs from Intrinsic Channel to Heavily Doped Body

A Carrier-Based Approach for Compact Modeling of the Long-Channel Undoped Symmetric Double-Gate MOSFETs

A carrier-based analytic model for undoped surrounding-gate MOSFETs

Extended Version of Carrier-Based Analytical Model to Account for the Doped Effect of Symmetric Double-Gate MOSFETs

An analytic channel potential based model for dynamic depletion surrounding-gate mosfets with arbitrary doping level

A Carrier-Based Analytic Model for the Undoped Symmetric Double-Gate MOSFETs

A Unified Carrier-Based Model for Undoped Symmetric Double-Gate and Surrounding-Gate Mosfets

A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs

An Explicit Carrier-Based Compact Model for Nanowire Surrounding-Gate Mosfet Simulation

A carrier-based analytic model for undoped Ultra-Thin-Body Silicon-on-insulator (UTB-SOI)MOSFETS

A Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-on-Insulator ( UTB-SOI ) MOSFETs

An Explicit Current–voltage Model for Undoped Double-Gate MOSFETs Based on Accurate Yet Analytic Approximation to the Carrier Concentration

A Unified Charge-Based Model for SOI MOSFETs Applicable from Intrinsic to Heavily Doped Channel

A Closed-Form Model for Position-Dependent Potential Across the Channel in DG-MOSFETs

A carrier-based analytic DCIV model for long channel undoped cylindrical surrounding-gate MOSFETs

Charge-Based Model for Symmetric Double-Gate Mosfets with Inclusion of Channel Doping Effect

An analytic potential-based model for undoped nanoscale surrounding-gate MOSFETs