Abstract:A complete carrier-based non-charge-sheet analytic model for nano-scale undoped symmetric doublegate MOSFETs is presented in this paper. The formulation is based on the Poisson's equation to solve for the carrier (electron) concentration directly rather than relying on the surface potential alone. Therefore, the distribution of the potential, the field, and the charge density in the channel away from the surface is also expressed in terms of the carrier concentration, giving a complete carrier-based noncharge-sheet model for nano-scale undoped symmetric double-gate MOSFETs including the short-channel effects. The model formulation has an analytic form that does not need to solve for the transcendent equation as in the conventional surface potential model or classical Pao-Sah formulation. As a result, the model can analytically predict the analytical I-V and C-V characteristics of the undoped symmetric double-gate MOSFETs. The validity of the model results has also been demonstrated by the extensive comparison with the 2-D numerical simulation and experimental data.

A Closed-Form Model for Position-Dependent Potential Across the Channel in DG-MOSFETs

A Non-Charge-Sheet Analytic Model for Symmetric Double-Gate MOSFETs With Smooth Transition Between Partially and Fully Depleted Operation Modes

An Analytical Potential Model of Double-Gate MOSFETs with Schottky Source/Drain

A Carrier-Based Analytic Model for the Undoped Symmetric Double-Gate MOSFETs

Analytical Current Model for Long-Channel Junctionless Double-Gate Mosfets

An analytic channel potential based model for dynamic depletion surrounding-gate mosfets with arbitrary doping level

A Complete Surface Potential-Based Core Model for Undoped Symmetric Double-Gate MOSFETs

A Carrier-Based Approach for Compact Modeling of the Long-Channel Undoped Symmetric Double-Gate MOSFETs

Charge-Based Model for Symmetric Double-Gate Mosfets with Inclusion of Channel Doping Effect

Extended Version of Carrier-Based Analytical Model to Account for the Doped Effect of Symmetric Double-Gate MOSFETs

A Two-Dimensional Analytical Model for Short Channel Junctionless Double-Gate MOSFETs

A rigorous analytical model for short-channel junctionless double-gate MOSFETs

A Complete Carrier-Based Non-Charge-Sheet Analytic Model for Nano-Scale Undoped Symmetric Double-Gate MOSFETs

Short-Channel-Effect Modeling of Dg-Fets Using Voltage-Doping Transformation Featuring Fd/Pd Modes

An Analytic Model for Channel Potential and Subthreshold Swing of the Symmetric and Asymmetric Double-Gate MOSFETs

A Rigorous and Concise Surface Potential-Based Core Model for the Undoped Symmetric Double-Gate Metal-Oxide-Semiconductor Field Effect Transistors

A Unified Carrier-Based Model for Undoped Symmetric Double-Gate and Surrounding-Gate Mosfets

An Exact Analytic Model of Undoped Body MOSFETs using the SPP Approach

A Charge-Based Capacitance Model for Double-Gate Tunnel FETs With Closed-Form Solution

An analytic potential-based model for undoped nanoscale surrounding-gate MOSFETs