Abstract:Compared with conventional silicon-based semiconductors, amorphous oxide semiconductors present several advantages, including the possibility of room-temperature fabrication, excellent uniformity, high transmittance, and high electron mobility. Notably, the application of oxide semiconductors to flexible electronic devices requires a low-temperature fabrication process. However, for the realization of semiconductor characteristics and stable products, the fabrication process requires annealing at temperatures of 300 °C or higher. To address this, a low-temperature microwave annealing method, which improves the electrical characteristics of a transistor and reduces the production time compared with the conventional annealing method, is presented herein. Microwave annealing is a well-known method of annealing that minimizes the heat energy transferred to a substrate via instantaneous heat transfer through the vibrations of the lattice in the material during microwave irradiation and is suitable as a low-temperature annealing method. In this study, we evaluate the electrical characteristics of devices subjected to conventional annealing at 200 °C and 300 °C for 1 h and microwave annealing at 200 °C for 10 min. For the device subjected to microwave annealing at 200 °C for 10 min, the threshold voltage, current on/off ratio, subthreshold swing, and saturation mobility are 13.9 V, 1.14 × 105, 3.05 V/dec, and 4.23 cm2/V·s, respectively. These characteristic results are far superior to the characteristic results of the device subjected to conventional annealing at 200 °C for 1 h and are equivalent to those of the device treated at 300 °C for 1 h. Thus, this study develops a more effective annealing method, which facilitates low-temperature fabrication in a reduced period.

Low temperature atomic hydrogen annealing of InGaAs MOSFETs

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

Low-Temperature Deuterium Annealing for HfO2/SiO2 Gate Dielectric in Silicon MOSFETs

Toward High Performance 4H-Sic MOSFETs Using Low Temperature Annealing Process with Supercritical Fluid

Mos Interface Control Technologies for Iii-V/Ge Channel Mosfets

Improved SOI FinFETs Performance With Low-Temperature Deuterium Annealing

Annealing Process on MOS channel Properties for Quasi‐Vertical GaN‐on‐Sapphire Trench MOSFET

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Microwave-Assisted Annealing Method for Low-Temperature Fabrication of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors

Effect of Rapid Thermal Annealing on DC Performance of Mg0.30Zn0.70O/Cd0.15Zn0.85O MOSHFET

Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance

Notable difference between rapid-thermal and microwave annealing on Ge pMOSFETs

Effects of low-temperature water vapor annealing of strained SiGe surface-channel pMOSFETs with high-κ dielectric

Schottky Barrier Height Tuning Via The Dopant Segregation Technique Through Low-Temperature Microwave Annealing

Effect of Thermal Treatments on HfO2/In0.7Ga0.3As Metal-Oxide-Semiconductor Capacitor Characteristics

In Situ Thermal Atomic Layer Etching for Sub-5 nm InGaAs Multigate MOSFETs

Low temperature recovery of OFF-state stress induced degradation of AlGaN/GaN high electron mobility transistors

Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited Zno-Channel/Al2o3-Dielectric

Annealing Modulated Microstructural and Electrical Properties of Plasma-Enhanced Atomic Layer Deposition-Derived HfO2/SiO2 Nanolaminates on AlGaN/GaN

Realization of Tunable-Performance in Atomic Layer Deposited Hf-doped In2O3 Thin Film Transistor Via Oxygen Vacancy Modulation.