Abstract:High-k oxide materials for metal–oxide–semiconductor field-effect transistors and metal–oxide–semiconductor (MOS) structure on SiC have been explored to enhance SiC-based device performance. In our experiments, the MOS capacitors with a high-k barium titanate (BaTiO 3 ) insulating layer were fabricated using the aerosol deposition (AD) method, and post-deposition annealed in O 2 atmospheres. We examined the effects of post-deposition annealing on the BaTiO 3 films and their impact on the surface and electrical characteristics of MOS capacitors. The crystallinity and surface morphologies of the BaTiO 3 films were analyzed by X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, and atomic force microscopy. We conducted the electrical analysis through current–voltage and capacitance–voltage ( C – V ) measurements. The post-deposition annealing process effectively reduced the gate leakage current of BaTiO 3 /4H-SiC and elevated the rectification ratio from 9.12 × 10 8 to 1.61 × 10 9 . C – V characteristics were measured at 1 MHz to investigate the oxide defect charges inside the MOS capacitors. Near-interface trap density ( ) decreased from 9.10 × 10 11 to 5.53 × 10 11 cm −2 due to post-annealing, which diminished flat band voltage hysteresis. Fixed oxide charge density ( ) also diminished from 4.00 × 10 11 to 3.58 × 10 11 cm −2 , and the oxygen vacancies were compensated by the oxygen atoms introduced from the O 2 during the post-deposition annealing. Our findings suggest that the post-deposition annealed process significantly influences surface and electrical properties during BaTiO 3 thin film deposition using AD.

Effect of Thermal Treatments on HfO2/In0.7Ga0.3As Metal-Oxide-Semiconductor Capacitor Characteristics

Comparison of Microstructure and Electrical Characteristics of Sputtering-Derived HfGdO/HfTiO and HfTiO/HfGdO Gate Stacks

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Modulation of Interfacial and Electrical Properties of Hfgdo/Gaas Gate Stacks by Ammonium Sulfide Passivation and Rapid Thermal Annealing

Evolution of Interface Chemistry and Dielectric Properties of Hfo2/Ge Gate Stack Modulated by Gd Incorporation and Thermal Annealing

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Effects of Annealing Gas on Electrical Properties and Reliability of Ge MOS Capacitors with HfTiON As Gate Dielectric

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Effects of Thermal Annealing on the Charge Localization Characteristics of Hfo2/Au/Hfo2 Stack

Effect of post-deposition annealing on charge distribution of metal-oxide-semiconductor capacitor with TiN/HfO2/SiO2/Si gate structure

Effects of H2 High-pressure Annealing on HfO2/Al2O3/In0.53Ga0.47As Capacitors: Chemical Composition and Electrical Characteristics

Experimental Investigation of Thermal Annealing and Ferroelectric Capacitor Area Effects for Hafnium-Zirconium Oxide Devices

Investigation of high-k/metal gate MOS capacitors annealed by microwave annealing as a post-metal annealing process

Effects of Annealing Process on Characteristics of Fully Transparent Zinc Tin Oxide Thin-Film Transistor

Effects of post-deposition annealing on BaTiO3/4H-SiC MOS capacitors using aerosol deposition method

Realization of Tunable-Performance in Atomic Layer Deposited Hf-doped In2O3 Thin Film Transistor Via Oxygen Vacancy Modulation.

Improvement of Interface Properties for Thermally Oxidized SiC/SiO2 MOS Capacitor by Post Oxidation Annealing Treatment

Effect of annealing on interfacial and band alignment characteristics of HfO 2/SiO 2 gate stacks on Ge substrates

Annealing Characteristics of Ultra-Thin High- K HfO 2 Gate Dielectrics

Effects of Microwave Annealing on High- k Dielectric HfO₂ Thin Films