Abstract:The ferroelectric properties and polarization switching of Hf0.5Zr0.5O2 thin films annealed at various temperatures are systematically investigated. Piezoresponse force microscopy, as well as switching current measurements, revealed non‐monotonic changes in the polarization switching speed concerning the annealing temperature. These variations are attributed to differences in the ferroelectric‐domain nucleation process induced by different defect levels in the films. Recently, HfO2‐based ferroelectric thin films have attracted widespread interest in developing next‐generation nonvolatile memories. To form a metastable ferroelectric orthorhombic phase in HfO2, a post‐annealing process is typically necessary. However, the microscopic mechanism underlying the effect of annealing temperature on ferroelectric domain nucleation and growth is still obscure, despite its importance in optimizing the operation speed of HfO2‐based devices. In this study, the ferroelectric properties and polarization switching of Hf0.5Zr0.5O2 thin films annealed at different temperatures (550–700 °C) are systematically investigated. Evidently, the crystal structure, remnant polarization, and dielectric constant monotonically change with annealing temperature. However, microscopic piezoresponse force microscopy images as well as macroscopic switching current measurements reveal non‐monotonic changes in the polarization switching speed with annealing temperature. This intriguing behavior is ascribed to the difference in the ferroelectric‐domain nucleation process induced by the amount of oxygen vacancies in the Hf0.5Zr0.5O2 thin films annealed at different temperatures. This work demonstrates that controlling the defect concentration of ferroelectric HfO2 by tuning the post‐annealing process is critical for optimizing device performance, particularly polarization switching speed.

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Characterization of Ferroelectric Characteristics for Hafnium Zirconium Oxide Capacitors with Refractory Electrodes

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Observation of Stabilized Negative Capacitance Effect in Hafnium-Based Ferroic Films

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Total-Dose Radiation Response and and Post-Irradiation Annealing Response of Hafnium Capacitors

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Nanoscale Investigation of the Effect of Annealing Temperature on the Polarization Switching Dynamics of Hf0.5Zr0.5O2 Thin Films

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3D Ferroelectric Phase Field Simulations of Polycrystalline Multi‐Phase Hafnia and Zirconia Based Ultra‐Thin Films

Formation of Uniform Crystal and Reduction of Electrical Variation in HfZrO$_2$ Ferroelectric Memory by Thermal Engineering

Interface-Roughness Effect on Polarization Switching and Reliability Performance of Doped-HfO 2 Capacitors