Abstract:Abstract Ferroelectric memory devices are expected for low-power and high-speed memory applications. HfO 2 -based ferroelectric is attracting attention for its CMOS-compatibility and high scalability. Mesoscopic-scale grains, of which size is almost comparable to device size, are formed in HfO 2 -based ferroelectric poly-crystalline thin films, which largely influences electrical characteristics in memory devices. It is important to study the impact of mesoscopic-scale grain formation on the electrical characteristics. In this work, first, we have studied the thickness dependence of the polarization switching kinetics in HfO 2 -based ferroelectric. While static low-frequency polarization is comparable for different thickness, dynamic polarization switching speed is slower in thin Hf 0.5 Zr 0.5 O 2 (HZO) capacitors. Based on the analysis using the NLS model and physical characterization, thinner HZO contains smaller grains with orientation non-uniformity and more grain boundaries than thicker HZO, which can impede macroscopic polarization switching. We have also theoretically and experimentally studied the polar-axis alignment of a HfO 2 -based ferroelectric thin film. While in-plane polar orientation is stable in as-grown HZO, out-of-plane polarization can be dominant by applying electric field, which indicates the transition from in-plane polar to out-of-plane polar orientation in the ferroelectric phase grains. This is confirmed by calculating kinetic pathway using ab-initio calculation.

Effect of thickness scaling on the switching dynamics of ferroelectric HfO2–ZrO2 capacitors

Switching Dynamics of Ferroelectric HfO2-ZrO2 with Various ZrO2 Contents

Interface-Roughness Effect on Polarization Switching and Reliability Performance of Doped-HfO 2 Capacitors

Effects of thickness and anisotropic strain on polarization switching properties of sub-10 nm epitaxial Hf 0.5 Zr 0.5 O 2 thin films

HfO2-ZrO2 Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed

Mesoscopic-scale grain formation in HfO2-based ferroelectric thin films and its impact on electrical characteristics

Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf 0.5 Zr 0.5 O 2 Film

Size-Scaling Effect on Domain Switching Time and Coercive Field of TiN/Hf0.5Zr0.5O2/TiN Thin-Film Capacitors

Ultrafast Switching of Ferroelectric HfO2-ZrO2 under Low Voltage with Layered Structure

The Enhanced Polarization Switching Speed and Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

The Enhanced Polarization Switching Speed and Endurance in Hf0.5Zr0.5O2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Thickness‐Dependent Asymmetric Potential Landscape and Polarization Relaxation in Ferroelectric HfxZr1−xO2 Thin Films Through Interfacial Bound Charges

Effect of Domain Structure and Dielectric Interlayer on Switching Speed of Ferroelectric Hf0.5Zr0.5O2 Film

Nucleation limited switching (NLS) model for HfO2-based metal-ferroelectric-metal (MFM) capacitors: Switching kinetics and retention characteristics

Dimensional Scaling of Ferroelectric Properties of Hafnia-Zirconia Thin Films: Electrode Interface Effects

Ferroelectric Properties and Polarization Fatigue of La:HfO2 Thin‐Film Capacitors

High Endurance and Low Fatigue Effect of Bilayer Stacked Antiferroelectric/Ferroelectric Hf x Zr 1- x O 2

Effect of electrical stress on time dependent dielectric breakdown (TDDB) tolerate capability of HfO2-ZrO2 ferroelectric films with different thicknesses

Enhanced Endurance and Imprint Properties in Hf 0.5 Zr 0.5 O 2−δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy

High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

Interfacial Regulation of Dielectric Properties in Ferroelectric Hf0.5Zr0.5O2 Thin Films