Abstract:In this work, synchrotron X‐ray diffraction, capacitance‐voltage measurements, and piezoresponse force microscopy imaging are used to examine the polarization wake‐up phenomenon that exists in ferroelectric capacitors with Hf0.5Zr0.5O2 (HZO) thin films. These measurements strongly demonstrate that polarization wake‐up results from a field‐induced phase change in the HZO films from an initially‐present tetragonal phase to the ferroelectric orthorhombic phase. As an emerging nonvolatile memory technology, HfO2‐based ferroelectrics exhibit excellent compatibility with silicon CMOS process flows; however, the reliability of polarization switching in these materials remains a major challenge. During repeated field programming and erase of the polarization state of initially pristine HfO2‐based ferroelectric capacitors, the magnitude of the measured polarization increases, a phenomenon known as "wake‐up". In this study, the authors attempt to understand what causes the wake‐up effect in Hf0.5Zr0.5O2 (HZO) capacitors using nondestructive methods that probe statistically significant sample volumes. Synchrotron X‐ray diffraction reveals a concerted shift in HZO Bragg peak position as a function of polarization switching cycle number in films prepared under conditions such that they exhibit extremely large (≈3000%) wake‐up. In contrast, a control sample with insignificant wake‐up shows no such peak shift. Capacitance – voltage measurements show evolution in the capacitance loop with switching cycle number for the wake‐up sample and no change for the control sample. Piezoresponse force microscopy measurements are utilized to visualize the domain switching with wake‐up. The combination of these observations clearly demonstrates that wake‐up is caused by a field‐driven phase transformation of the tetragonal phase to the metastable ferroelectric orthorhombic phase during polarization switching of HZO capacitors.

Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf 0.5 Zr 0.5 O 2 Film

High polarization, endurance and retention in sub-5 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ films

High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

A Study on the Hf0.5Zr0.5O2 Ferroelectric Capacitors Fabricated with Hf and Zr Chlorides

Switching Dynamics of Ferroelectric HfO2-ZrO2 with Various ZrO2 Contents

Effect of thickness scaling on the switching dynamics of ferroelectric HfO2–ZrO2 capacitors

Ultrahigh Dielectric Permittivity and Ferroelectric Polarization in Size-Scaled Hf0.5Zr0.5O2 Thin-Film Capacitors

Interface-Roughness Effect on Polarization Switching and Reliability Performance of Doped-HfO 2 Capacitors

Field‐Induced Ferroelectric Phase Evolution During Polarization "Wake‐Up" in Hf0.5Zr0.5O2 Thin Film Capacitors

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

High performance and nearly wake-up free Hf 0.5 Zr 0.5 O 2 ferroelectric capacitor realized by middle layer strategy with BEOL compatibility

Ultrafast Switching of Ferroelectric HfO2-ZrO2 under Low Voltage with Layered Structure

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

High Performance and Nearly Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Capacitor Realized by Middle Layer Strategy with BEOL Compatibility

Observing Ferroelastic switching in Hf 0.5 Zr 0.5 O 2 Thin Film

The Enhanced Polarization Switching Speed and Endurance in Hf0.5Zr0.5O2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Enhanced polarization and endurance properties of ZrO2-based ferroelectric capacitor using HfO2interfacial layer

Interfacial Regulation of Dielectric Properties in Ferroelectric Hf0.5Zr0.5O2 Thin Films

The Enhanced Polarization Switching Speed and Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Ferroelectric Properties and Polarization Fatigue of La:HfO2 Thin‐Film Capacitors

Dual Al₂O₃/Hf₀.₅Zr₀.₅O₂ Stack Thin Films for Improved Ferroelectricity and Reliability