Abstract:Compared to electrochemical energy storage, dielectric thin film-based capacitors possess the advantages of higher voltage stability and higher break-down voltage as well as lower leakage current etc. Since HfO 2 films are compatible to microelectronic process and its ferroelectricity is strategically important in memory device, the realization of their excellent energy storage comparable will broaden their applications in microelectronic devices. In this study, we utilized Al 3+ dopant, known for its smaller ionic radius compared to Hf 4+ , to induce lattice disorder in the Hf 0.5 Zr 0.5 O 2 films, facilitating transformation of the Hf 0.5 Zr 0.5 O 2 film from ferroelectric to antiferroelectric, and ultimately to a superparaelectric-like relaxation antiferroelectric behaviors. We have experimentally demonstrated that, by introduction of an appropriate Al doping level of x= 4.13%, the Hf 0.5 Zr 0.5 O 2 thin films with a relaxation antiferroelectric characteristic can achieve a corresponding recoverable energy density of more than 100 J cm −3 , an efficiency of more than 80%, and an effective enhancement of the dielectric strength to more than 6 MV cm −1 . Compared to HfO 2 -based amorphous/crystalline films reported previously, this is a record-high energy density in atomic layer deposited HfO 2 /ZrO 2 ternary doped oxides, and beyond that, we also demonstrate their superfast charging/discharging as a capacitor. Targeting at high-speed supercapacitor applications in integrated circuit, HfO 2 -based dielectric may win the competition with perovskite oxides in terms of dielectric breakdown strength and charging/discharging speed etc. Our fundamental understanding of the physics behind also enriches the knowledge of materials science and dielectric physics.

Ultrahigh Dielectric Permittivity and Ferroelectric Polarization in Size-Scaled Hf0.5Zr0.5O2 Thin-Film Capacitors

High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

High polarization, endurance and retention in sub-5 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ films

Flexible Hf0.5Zr0.5O2 ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility

Ultralarge polarization in ferroelectric hafnia-based thin films

A Stable Rhombohedral Phase in Ferroelectric Hf(Zr)1+xO2 Capacitor with Ultralow Coercive Field.

Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf 0.5 Zr 0.5 O 2 Film

Back-End-of-Line Compatible HfO2/ZrO2 Superlattice Ferroelectric Capacitor with High Endurance and Remnant Polarization

A Novel Hafnia-based Ferroelectric Capacitor with Antiferroelectric Zirconia Seed Layer for High Ferroelectricity and Endurance

BEOL-Compatible Ferroelectric Capacitor of 5 nm Ultrathin HZO With High Remanent Polarization and Excellent Endurance

High Endurance and Low Fatigue Effect of Bilayer Stacked Antiferroelectric/Ferroelectric Hf x Zr 1- x O 2

Ultrahigh Energy Storage Density in Superparaelectric‐Like Hf0.2Zr0.8O2 Electrostatic Supercapacitors

Ferroelectric Properties and Polarization Fatigue of La:HfO2 Thin‐Film Capacitors

High performance and nearly wake-up free Hf 0.5 Zr 0.5 O 2 ferroelectric capacitor realized by middle layer strategy with BEOL compatibility

Superior and ultrafast energy storage performance of relaxorantiferroelectric HfO2-based supercapacitors

High Performance and Nearly Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Capacitor Realized by Middle Layer Strategy with BEOL Compatibility

Enhanced Endurance and Imprint Properties in Hf 0.5 Zr 0.5 O 2−δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy

Improvement of Polarization Retention at Low and High Temperatures for Hf0.5Zr0.5O2 Thin-Film Capacitors

Thickness‐Dependent Asymmetric Potential Landscape and Polarization Relaxation in Ferroelectric HfxZr1−xO2 Thin Films Through Interfacial Bound Charges

Superior and Ultrafast Energy Storage Performance of Relaxor-Antiferroelectric Hfo2-Based Supercapacitors

A Study on the Hf0.5Zr0.5O2 Ferroelectric Capacitors Fabricated with Hf and Zr Chlorides