Ultrahigh Energy Storage Density in Superparaelectric‐Like Hf0.2Zr0.8O2 Electrostatic Supercapacitors

Haiyan Chen,Lei Liu,Zhongna Yan,Xi Yuan,Hang Luo,Dou Zhang
DOI: https://doi.org/10.1002/advs.202300792
IF: 15.1
2023-04-23
Advanced Science
Abstract:Low‐temperature annealing combined with the insertion of Al2O3 insulating layer can promote the generation of smaller grain sizes with well‐dispersed polar nanoregions. Such characteristics can promise high maximum polarization and low remnant polarization (just like superparaelectric‐like performance), which can improve the energy storage properties of Hf0.2Zr0.8O2/Al2O3/Hf0.2Zr0.8O2 multilayer films. Electrostatic capacitors attract great interest in energy storage fields due to their advantages of high power‐density, fast charge/discharge speed, and great reliability. Intensive efforts have been placed on the development of high‐energy‐density of capacitors. Herein, a novel supercapacitor with Hf0.2Zr0.8O2/xAl2O3/Hf0.2Zr0.8O2 (HAHx) is designed to improve the breakdown strength (Eb) through optimizing Al2O3 (AO) film thickness. Low‐temperature annealing is first proposed to enhance the polarization difference (Pm−Pr) due to the formation of dispersed polar nanoregions, which is called "superparaelectric‐like" similar to previous super‐paraelectric behavior of perovskite structures. As results, both large Eb and Pm−Pr values are obtained, leading to an ultrahigh energy storage density of 87.66 J cm−3 with a high efficiency of 68.6%, as well as a reliable endurance of 107 cycles. This work provides a feasible pathway to improve both the polarization difference and breakdown strength of HfO2‐based films by the combination of insulation insertion layer and low‐temperature annealing. The proposed strategy can contribute to the realization of high‐performance electrostatic supercapacitors with excellent microsystem compatibility.
materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
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