Abstract:In this work, synchrotron X‐ray diffraction, capacitance‐voltage measurements, and piezoresponse force microscopy imaging are used to examine the polarization wake‐up phenomenon that exists in ferroelectric capacitors with Hf0.5Zr0.5O2 (HZO) thin films. These measurements strongly demonstrate that polarization wake‐up results from a field‐induced phase change in the HZO films from an initially‐present tetragonal phase to the ferroelectric orthorhombic phase. As an emerging nonvolatile memory technology, HfO2‐based ferroelectrics exhibit excellent compatibility with silicon CMOS process flows; however, the reliability of polarization switching in these materials remains a major challenge. During repeated field programming and erase of the polarization state of initially pristine HfO2‐based ferroelectric capacitors, the magnitude of the measured polarization increases, a phenomenon known as "wake‐up". In this study, the authors attempt to understand what causes the wake‐up effect in Hf0.5Zr0.5O2 (HZO) capacitors using nondestructive methods that probe statistically significant sample volumes. Synchrotron X‐ray diffraction reveals a concerted shift in HZO Bragg peak position as a function of polarization switching cycle number in films prepared under conditions such that they exhibit extremely large (≈3000%) wake‐up. In contrast, a control sample with insignificant wake‐up shows no such peak shift. Capacitance – voltage measurements show evolution in the capacitance loop with switching cycle number for the wake‐up sample and no change for the control sample. Piezoresponse force microscopy measurements are utilized to visualize the domain switching with wake‐up. The combination of these observations clearly demonstrates that wake‐up is caused by a field‐driven phase transformation of the tetragonal phase to the metastable ferroelectric orthorhombic phase during polarization switching of HZO capacitors.

Improvement of Polarization Retention at Low and High Temperatures for Hf0.5Zr0.5O2 Thin-Film Capacitors

High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

High polarization, endurance and retention in sub-5 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ films

Stable Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films Within a Broad Working Temperature Range

Imprint-Correlated Retention Loss in Hf0.5Zr0.5O2 Ferroelectric Thin Film Through Wide-Temperature Characterizations

Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf 0.5 Zr 0.5 O 2 thin films by thermal atomic layer deposition

Interface-Roughness Effect on Polarization Switching and Reliability Performance of Doped-HfO 2 Capacitors

Ultrahigh Dielectric Permittivity and Ferroelectric Polarization in Size-Scaled Hf0.5Zr0.5O2 Thin-Film Capacitors

Reliable Ferroelectricity Down to Cryogenic Temperature in Wake-Up Free Hf0.5Zr0.5O2 Thin Films by Thermal Atomic Layer Deposition

The Enhanced Polarization Switching Speed and Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

A Study on the Hf0.5Zr0.5O2 Ferroelectric Capacitors Fabricated with Hf and Zr Chlorides

The Enhanced Polarization Switching Speed and Endurance in Hf0.5Zr0.5O2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Field‐Induced Ferroelectric Phase Evolution During Polarization "Wake‐Up" in Hf0.5Zr0.5O2 Thin Film Capacitors

Remanent Polarization Reduction with Enhanced Temperature in Ferroelectric Thin Films

Precise control of fatigue, wake-up, charge injection, and break-down in Hf0.5Zr0.5O2-based ferroelectric memories

Epitaxial Hf0.5Zr0.5O2 Films: A Temperature Dependence Study

Enhanced Endurance and Imprint Properties in Hf 0.5 Zr 0.5 O 2−δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy

Large remnant polarization and great reliability characteristics in W/HZO/W ferroelectric capacitors

Antiferroelectric Phase Evolution in HfxZr1-xO2 Thin Film Toward High Endurance of Non-Volatile Memory Devices

Back-End-of-Line Compatible HfO2/ZrO2 Superlattice Ferroelectric Capacitor with High Endurance and Remnant Polarization

Flexible Hf0.5Zr0.5O2 ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility