Abstract:In this paper, it is observed that polarization retention and stability of ferroelectric Hf0.5Zr0.5O2 (HZO) are significantly dependent on humidity. Elimination of absorbed water shows a significant effect in improving polarization stability and suppressing imprinting characteristics. This work provides a novel understanding of the relationship between surface electrochemistry and ferroelectricity in HfO2‐based ferroelectric materials. The discovery of nanoscale ferroelectricity in hafnia (HfO2) has paved the way for next generation high‐density, non‐volatile devices. Although the surface conditions of nanoscale HfO2 present one of the fundamental mechanism origins, the impact of external environment on HfO2 ferroelectricity remains unknown. In this study, the deleterious effect of ambient moisture is examined on the stability of ferroelectricity using Hf0.5Zr0.5O2 (HZO) films as a model system. It is found that the development of an intrinsic electric field due to the adsorption of atmospheric water molecules onto the film's surface significantly impairs the properties of domain retention and polarization stability. Nonetheless, vacuum heating efficiently counteracts the adverse effects of water adsorption, which restores the symmetric electrical characteristics and polarization stability. This work furnishes a novel perspective on previous extensive studies, demonstrating significant impact of surface water on HfO2‐based ferroelectrics, and establishes the design paradigm for the future evolution of HfO2‐based multifunctional electronic devices.

Imprint-Correlated Retention Loss in Hf0.5Zr0.5O2 Ferroelectric Thin Film Through Wide-Temperature Characterizations

Fatigue and retention in the growth window of ferroelectric Hf0.5Zr0.5O2 thin films

Stable Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films Within a Broad Working Temperature Range

Enhanced Endurance and Imprint Properties in Hf 0.5 Zr 0.5 O 2−δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy

Epitaxial Hf0.5Zr0.5O2 Films: A Temperature Dependence Study

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Improvement of Polarization Retention at Low and High Temperatures for Hf0.5Zr0.5O2 Thin-Film Capacitors

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

On the relationship between imprint and reliability in Hf 0.5 Zr 0.5 O 2 based ferroelectric random access memory

Antiferroelectric Phase Evolution in HfxZr1-xO2 Thin Film Toward High Endurance of Non-Volatile Memory Devices

Ferroelectricity of pristine Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films fabricated by atomic layer deposition

Effect of electrical stress on time dependent dielectric breakdown (TDDB) tolerate capability of HfO2-ZrO2 ferroelectric films with different thicknesses

Precise control of fatigue, wake-up, charge injection, and break-down in Hf0.5Zr0.5O2-based ferroelectric memories

The Enhanced Polarization Switching Speed and Endurance in Hf0.5Zr0.5O2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics

Interfacial Regulation of Dielectric Properties in Ferroelectric Hf0.5Zr0.5O2 Thin Films

The Enhanced Polarization Switching Speed and Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

Performance Improvement by Modifying Deposition Temperature in HfZrO x Ferroelectric Memory

Ambient Moisture‐Induced Self Alignment of Polarization in Ferroelectric Hafnia

Excellent Reliability in Hf0.5Zr0.5O2 Based Ferroelectric Device with Oxygen-Doped ITO Electrodes