Abstract:After the discovery of ferroelectricity in HfO$_2$ based thin films a decade ago, ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) thin films are frequently being utilized in the CMOS (Complementary Metal- Oxide Semiconductor) and logic devices, thanks to their large remnant polarization, high retention and endurance. A great deal of effort has been made towards understanding the origin of ferroelectricity in epitaxial HZO thin films and controlling the microstructure at the atomic level which governs the ferroelectric phase. Nevertheless, the HZO films still suffer from fundamental questions, such as (1) the vagueness of interfacial mechanisms between HZO, buffer layer and the substrate which controls the polar phase; (2) the nature of the metastable polar phase responsible for the ferroelectricity, be it orthorhombic or rhombohedral; which are poorly understood. Here, we have addressed these issues by employing the in-situ reflection high energy electron diffraction -- assisted pulsed laser deposition and mapping the asymmetrical polar maps on high quality HZO films grown on functional perovskite oxide substrates. The interface between La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO) and the substrate is shown to be quite important, and a slightly rougher interface of the former destabilizes the ferroelectric phase of HZO irrespective of well-controlled growth of the ferroelectric layers. A rhombohedral-like symmetry of HZO unit cell is extracted through the x-ray diffraction asymmetrical polar maps. The ferroelectric measurements on a nearly 7 nm HZO film on STO(001) substrate display a remnant polarization close to 8 uC/cm$^2$. These results highlight the complexities involved at the atomic scale interface in the binary oxides thin films and can be of importance to the HfO$_2$-based ferroelectric community which is still at its infancy.

Fatigue and retention in the growth window of ferroelectric Hf0.5Zr0.5O2 thin films

Imprint-Correlated Retention Loss in Hf0.5Zr0.5O2 Ferroelectric Thin Film Through Wide-Temperature Characterizations

Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.

High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

High polarization, endurance and retention in sub-5 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ films

Epitaxial Hf0.5Zr0.5O2 Films: A Temperature Dependence Study

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress

Polarization fatigue mechanism of laminated hafnium zirconium oxide ferroelectric thin films

Tensile stress regulated microstructures and ferroelectric properties of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films

Complexities in the growth and stabilization of polar phase in the Hf$_{0.5}$Zr$_{0.5}$O$_2$ thin films grown by Pulsed Laser Deposition

Thickness-Dependent Ferroelectricity in Freestanding Hf 0.5 Zr 0.5 O 2 Membranes

Epitaxial ferroelectric Hf0.5Zr0.5O2 thin film on a buffered YSZ substrate through interface reaction

Interfacial Regulation of Dielectric Properties in Ferroelectric Hf0.5Zr0.5O2 Thin Films

Epitaxial Ferroelectric La-doped Hf0.5Zr0.5O2 Thin Films

Epitaxial Orientation-Controlled High Crystallinity and Ferroelectric Properties in Hf0.5Zr0.5O2 Films

Improvement of Polarization Retention at Low and High Temperatures for Hf0.5Zr0.5O2 Thin-Film Capacitors

Ferroelectric and electric field cycling properties of un-doped HfO2 films

The Enhanced Polarization Switching Speed and Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf1-xZrxO2