3D Ferroelectric Phase Field Simulations of Polycrystalline Multi‐Phase Hafnia and Zirconia Based Ultra‐Thin Films

Prabhat Kumar,Michael Hoffmann,Andy Nonaka,Sayeef Salahuddin,Zhi (Jackie) Yao

DOI: https://doi.org/10.1002/aelm.202400085

IF: 6.2

2024-06-26

Advanced Electronic Materials

Abstract:Hafnia and zirconia‐based thin films have emerged as promising materials for gate oxide of next‐generation nanoelectronic devices. These ferroelectrics can exhibit negative capacitance, which is of interest for overcoming the fundamental limitations of energy efficiency of transistors. In this study, 3D phase field simulations are applied to investigate the domain formation and associated negative capacitance effects in polycrystalline, multi‐phase ultra‐thin ferroelectrics on silicon. HfO2– and ZrO2–based ferroelectric thin films have emerged as promising candidates for the gate oxides of next‐generation electronic devices. Recent work has experimentally demonstrated that a tetragonal/orthorhombic (t/o‐) phase mixture with partially in‐plane polarization can lead to negative capacitance (NC) stabilization. However, there is a discrepancy between experiments and the theoretical understanding of domain formation and domain wall motion in these multi‐phase, polycrystalline materials. Furthermore, the effect of anisotropic domain wall coupling on NC has not been studied so far. Here, 3D phase field simulations of HfO2– and ZrO2–based mixed‐phase ultra‐thin films on silicon are applied to understand the necessary and beneficial conditions for NC stabilization. It is found that smaller ferroelectric grains and a larger angle of the polar axis with respect to the out‐of‐plane direction enhances the NC effect. Furthermore, it is shown that theoretically predicted negative domain wall coupling even along only one axis prevents NC stabilization. Therefore, it is concluded that topological domain walls play a critical role in experimentally observed NC phenomena in HfO2– and ZrO2–based ferroelectrics.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology