Abstract:Hafnia and zirconia‐based thin films have emerged as promising materials for gate oxide of next‐generation nanoelectronic devices. These ferroelectrics can exhibit negative capacitance, which is of interest for overcoming the fundamental limitations of energy efficiency of transistors. In this study, 3D phase field simulations are applied to investigate the domain formation and associated negative capacitance effects in polycrystalline, multi‐phase ultra‐thin ferroelectrics on silicon. HfO2– and ZrO2–based ferroelectric thin films have emerged as promising candidates for the gate oxides of next‐generation electronic devices. Recent work has experimentally demonstrated that a tetragonal/orthorhombic (t/o‐) phase mixture with partially in‐plane polarization can lead to negative capacitance (NC) stabilization. However, there is a discrepancy between experiments and the theoretical understanding of domain formation and domain wall motion in these multi‐phase, polycrystalline materials. Furthermore, the effect of anisotropic domain wall coupling on NC has not been studied so far. Here, 3D phase field simulations of HfO2– and ZrO2–based mixed‐phase ultra‐thin films on silicon are applied to understand the necessary and beneficial conditions for NC stabilization. It is found that smaller ferroelectric grains and a larger angle of the polar axis with respect to the out‐of‐plane direction enhances the NC effect. Furthermore, it is shown that theoretically predicted negative domain wall coupling even along only one axis prevents NC stabilization. Therefore, it is concluded that topological domain walls play a critical role in experimentally observed NC phenomena in HfO2– and ZrO2–based ferroelectrics.

Tuning Negative Capacitance in PbZr0.2Ti0.8O3/Sr

Strain engineering of ferroelectric negative capacitance in PbZr<sub>(1-<i>x</i>)</sub>Ti<sub><i>x</i></sub>O<sub>3</sub> thin films

Room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure.

Multiple factors of regulation for transient negative capacitance in PbZr(1-x)Ti(x)O3 ferroelectric thin films

Strain Tuning on Van Der Waals Negative Capacitance Transistors

Revealing Fast Negative Capacitance in PbZr 0.2 Ti 0.8 O 3 Thin Film with Acicular Ferroelastic Domains

Observing suppressed polarization in flexible ferroelectric negative capacitance field effect transistors

Strain Tuning of Negative Capacitance in Ferroelectric KNbO3 Thin Films.

Strain Tuning of Negative Capacitance in Ferroelectric KNbO 3 Thin Films

Dielectric behavior and negative capacitance in multidomain ferroelectric/dielectric superlattices

Direct Measurement of Negative Capacitance in Ferroelectric/Semiconductor Heterostructures

Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitors

Modeling Transient Negative Capacitance in Steep-Slope FeFETs

Observation of Stabilized Negative Capacitance Effect in Hafnium-Based Ferroic Films

3D Ferroelectric Phase Field Simulations of Polycrystalline Multi‐Phase Hafnia and Zirconia Based Ultra‐Thin Films

Effects of Interfacial Polarization on Voltage Tunability of Pb(Fe 1/2 Nb 1/2 ) 1– X Ti X O 3 Single Crystals

Antiferroelectric Negative Capacitance Transistor for Low Power Consumption

Constructing an Overall Static Negative Capacitance Effect Via Energy Landscape Designing

Utilizing Domain Engineering to Achieve High-Polarization Relaxor Ferroelectrics for Low-Consumption Ceramic Capacitors

On the persistence of polar domains in ultrathin ferroelectric capacitors

Duality of Switching Mechanisms and Transient Negative Capacitance in Improper Ferroelectrics