Abstract:A novel in situ biasing approach has facilitated atomic‐level observation of domain wall translational features in PZT/LSMO heterojunction via precise electric field control. The study uncovers a unique domain wall creeping behavior with morphology variation, driven by the competition between gradient, elastic, and electrostatic energies. These findings advance a fundamental understanding of domain wall properties and potential modulation in practical devices. As a promising candidate for next‐generation nonvolatile memory devices, ferroelectric oxide films exhibit many emergent phenomena with functional applications, making understanding polarization switching and domain evolution behaviors of fundamental importance. However, tracking domain wall motion in ferroelectric oxide films with high spatial resolution remains challenging. Here, an in situ biasing approach for direct atomic‐scale observations of domain nucleation and sideways motion is presented. By accurately controlling the applied electric field, the lateral translational speed of the domain wall can decrease to less than 2.2 Å s−1, which is observable with atomic resolution STEM imaging. In situ observations on a capacitor structured PbZr0.1Ti0.9O3/La0.7Sr0.3MnO3 heterojunction demonstrate the unique creeping behavior of a domain wall under a critical electric field, with the atomic structure of the creeping domain wall revealed. Moreover, the evolution of the metastable domain wall forms an elongated morphology, which contains a large proportion of charged segments. Phase‐field simulations unveil the competition between gradient, elastic, and electrostatic energies that decide this unique domain wall creeping and morphology variation. This work paves the way toward a complete fundamental understanding of domain wall physics and potential modulations of domain wall properties in real devices.

Dielectric behavior and negative capacitance in multidomain ferroelectric/dielectric superlattices

Room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure.

Strain engineering of ferroelectric negative capacitance in PbZr<sub>(1-<i>x</i>)</sub>Ti<sub><i>x</i></sub>O<sub>3</sub> thin films

Negative/Positive Electrocaloric Effect in Single-Layer Pb(ZrₓTi1–x )O₃ Thin Films for Solid-State Cooling Device

On the persistence of polar domains in ultrathin ferroelectric capacitors

Observation of negative capacitance in antiferroelectric PbZrO3 Films

Giant Negative Electrocaloric Effect Induced by Domain Transition in the Strained Ferroelectric Thin Film

Tuning Negative Capacitance in PbZr0.2Ti0.8O3/Sr

Spatially resolved steady-state negative capacitance

3D Ferroelectric Phase Field Simulations of Polycrystalline Multi‐Phase Hafnia and Zirconia Based Ultra‐Thin Films

Polarons, free charge localisation and effective dielectric permittivity in oxides

On the negative capacitance in ferroelectric heterostructures

Mimicking Antiferroelectrics with Ferroelectric Superlattices

Assessing the nature of nanoscale ferroelectric domain walls in lead titanate multilayers

Ferroelectricity Driven Magnetism at Domain Walls in LaAlO3/PbTiO3 Superlattices

First Observation of Negative Capacitance in Molecular Ferroelectric Thin Films

In Situ Observation of Domain Wall Lateral Creeping in a Ferroelectric Capacitor

Domain wall architecture in tetragonal ferroelectric thin films

Self-Organized Ferroelastic Superdomains with Enhanced Piezoresponse in (101)-Oriented Pb(Zr 0.2 ,Ti 0.8 )O 3 Thin Films

Revealing Fast Negative Capacitance in PbZr 0.2 Ti 0.8 O 3 Thin Film with Acicular Ferroelastic Domains

Giant negative electrostriction and dielectric tunability in a van der Waals layered ferroelectric