Alternating Current Field Effects in Atomically Ferroelectric Ultrathin Films

Jinming Cao,Mengxia Liu,Zhonglei Liu,Hua Hou,Yuhong Zhao
DOI: https://doi.org/10.3390/ma15072506
IF: 3.4
2022-01-01
Materials
Abstract:In this work, atomically K1-xNaxNbO3 thin films are taken as examples to investigate the reversible and irreversible effects in a horizon plane, i.e., the changes of domain structures, phase states, free energies, etc., under a z-axis alternating current field via a phase-field method. The simulation results show the driving forces during the charging and discharging process, where there is a variation for the angles of the domain walls from 180 degrees to 90 degrees (and then an increase to 135 degrees), which are the external electric field and domain wall evolution, respectively. As for the phase states, there is a transformation between the orthorhombic and rhombohedral phases which can't be explained by the traditional polarization switching theory. This work provides a reasonable understanding of the alternating current field effect, which is essential in information and energy storage.
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