Abstract:Electric-field (E-field) control of magnetism enabled by multiferroic materials has the potential to revolutionize the landscape of present memory devices plagued with high energy dissipation. To date, this E-field controlled multiferroic scheme has only been demonstrated at room temperature using BiFeO3 films grown on DyScO3, a unique and expensive substrate, which gives rise to a particular ferroelectric domain pattern in BiFeO3. Here, we demonstrate reversible electric-field-induced switching of the magnetic state of the Co layer in Co/BiFeO3 (BFO) (001) thin film heterostructures fabricated on (001) SrTiO3 (STO) substrates. The angular dependence of the coercivity and the remanent magnetization of the Co layer indicates that its easy axis reversibly switches back and forth 45° between the (100) and the (110) crystallographic directions of STO as a result of alternating application of positive and negative voltage pulses between the patterned top Co electrode layer and the (001) SrRuO3 (SRO) layer on which the ferroelectric BFO is epitaxially grown. The coercivity (HC) of the Co layer exhibits a hysteretic behavior between two states as a function of voltage. A mechanism based on the intrinsic magnetoelectric coupling in multiferroic BFO involving projection of antiferromagnetic G-type domains is used to explain the observation. We have also measured the exact canting angle of the G-type domain in strained BFO films for the first time using neutron diffraction. These results suggest a pathway to integrating BFO-based devices on Si wafers for implementing low power consumption and nonvolatile magnetoelectronic devices.

Phase-field Simulation of Electric-Field-induced In-Plane Magnetic Domain Switching in Magnetic/ferroelectric Layered Heterostructures

Phase-Field Simulation of Strain-Induced Domain Switching in Magnetic Thin Films

Spatially Resolved Ferroelectric Domain-Switching-Controlled Magnetism in Co40Fe40B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 Multiferroic Heterostructure

Spatially Resolved Ferroelectric Domain-Switching-Controlled Magnetism in Co40Fe40B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 Multiferroic Heterostructure.

Anomalous Electric Field-Induced Switching of Local Magnetization Vector in A Simple Febsic-On-Pb(Zr,Ti)O-3 Multiferroic Bilayer

Alternating Current Field Effects in Atomically Ferroelectric Ultrathin Films

Phase Field Simulations on Domain Switching-Induced Toughening in Ferromagnetic Materials

Electrically Controlled Magnetization Switching in CoFe2O4/Pb(Mg1/3Nb2/3)O3–PbTiO3 Heterostructure

Phase-field Simulations of Ferroelectric/ferroelastic Polarization Switching

Electric-field-controlled magnetization switching in multiferroic heterostructures containing interactive magnetic nanoislands

Electric-Field Induced Reversible Switching of the Magnetic Easy Axis in Co/Bifeo3 on Srtio3

Phase Field Simulation of Charged Interface Formation During Ferroelectric Switching

Understanding, Predicting, and Designing Ferroelectric Domain Structures and Switching Guided by the Phase-Field Method

Multiferroic Domain Structure In Orthorhombic Multiferroics Of Cycloidal Spin Order: Phase Field Simulations

Ferroelastic Domain Switching Dynamics under Electrical and Mechanical Excitations

Electric-field Induced Reversible Switching of the Magnetic Easy-axis in Co/BiFeO3/SrRuO3/SrTiO3 Heterostructures

Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure

Vector analysis of electric-field-induced antiparallel magnetic domain evolution in ferromagnetic/ferroelectric heterostructures

Electric-Field-Control Of Resistance And Magnetization Switching In Multiferroic Zn0.4fe2.6o4/0.7pb(Mg2/3nb1/3)O-3-0.3pbtio(3) Epitaxial Heterostructures

On the elastically coupled magnetic and ferroelectric domains: A phase-field model

Electric-field Control of Magnetism in Co40Fe40B20/(1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 Multiferroic Heterostructures with Different Ferroelectric Phases.