Abstract:Hafnia and zirconia‐based thin films have emerged as promising materials for gate oxide of next‐generation nanoelectronic devices. These ferroelectrics can exhibit negative capacitance, which is of interest for overcoming the fundamental limitations of energy efficiency of transistors. In this study, 3D phase field simulations are applied to investigate the domain formation and associated negative capacitance effects in polycrystalline, multi‐phase ultra‐thin ferroelectrics on silicon. HfO2– and ZrO2–based ferroelectric thin films have emerged as promising candidates for the gate oxides of next‐generation electronic devices. Recent work has experimentally demonstrated that a tetragonal/orthorhombic (t/o‐) phase mixture with partially in‐plane polarization can lead to negative capacitance (NC) stabilization. However, there is a discrepancy between experiments and the theoretical understanding of domain formation and domain wall motion in these multi‐phase, polycrystalline materials. Furthermore, the effect of anisotropic domain wall coupling on NC has not been studied so far. Here, 3D phase field simulations of HfO2– and ZrO2–based mixed‐phase ultra‐thin films on silicon are applied to understand the necessary and beneficial conditions for NC stabilization. It is found that smaller ferroelectric grains and a larger angle of the polar axis with respect to the out‐of‐plane direction enhances the NC effect. Furthermore, it is shown that theoretically predicted negative domain wall coupling even along only one axis prevents NC stabilization. Therefore, it is concluded that topological domain walls play a critical role in experimentally observed NC phenomena in HfO2– and ZrO2–based ferroelectrics.

Design Space for Stabilized Negative Capacitance in HfO 2 Ferroelectric-Dielectric Stacks Based on Phase Field Simulation

3D Ferroelectric Phase Field Simulations of Polycrystalline Multi‐Phase Hafnia and Zirconia Based Ultra‐Thin Films

On the negative capacitance in ferroelectric heterostructures

Physical Mechanism behind the Hysteresis-free Negative Capacitance Effect in Metal-Ferroelectric-Insulator-Metal Capacitors with Dielectric Leakage and Interfacial Trapped Charges

Observation of Stabilized Negative Capacitance Effect in Hafnium-Based Ferroic Films

Strain Tuning on Van Der Waals Negative Capacitance Transistors

Observing suppressed polarization in flexible ferroelectric negative capacitance field effect transistors

Strain engineering of ferroelectric negative capacitance in PbZr<sub>(1-<i>x</i>)</sub>Ti<sub><i>x</i></sub>O<sub>3</sub> thin films

3D ferroelectric phase field simulations of polycrystalline multi-phase hafnia and zirconia based ultra-thin films

Duality of Switching Mechanisms and Transient Negative Capacitance in Improper Ferroelectrics

On the Ferroelectric Polarization Switching of Hafnium Zirconium Oxide in Ferroelectric/Dielectric Stack

Multi-domain Characterization of Ferroelectric Switching Dynamics with a Physics-based SPICE Circuit Model for Phase Field Simulations

HfO<inf>2</inf>-based Ferroelectric Devices for Low Power Applications

A Study of Ferroelectric Polarization Switching and Negative Capacitance Effect for Enhanced Energy Storage in on-Chip Electrostatic Supercapacitors

HfO<sub>2</sub>-based Ferroelectric Devices for Low Power Applications

Thickness‐Dependent Asymmetric Potential Landscape and Polarization Relaxation in Ferroelectric HfxZr1−xO2 Thin Films Through Interfacial Bound Charges

Dual mechanisms for transient capacitance anomaly in improper ferroelectrics

Implementation and Performance Evaluation of Ferroelectric Negative Capacitance FET

Modeling Transient Negative Capacitance in Steep-Slope FeFETs

Constructing an Overall Static Negative Capacitance Effect Via Energy Landscape Designing

A Stable Rhombohedral Phase in Ferroelectric Hf(Zr)1+xO2 Capacitor with Ultralow Coercive Field.