Abstract:Abstract Ferroelectric memory devices are expected for low-power and high-speed memory applications. HfO 2 -based ferroelectric is attracting attention for its CMOS-compatibility and high scalability. Mesoscopic-scale grains, of which size is almost comparable to device size, are formed in HfO 2 -based ferroelectric poly-crystalline thin films, which largely influences electrical characteristics in memory devices. It is important to study the impact of mesoscopic-scale grain formation on the electrical characteristics. In this work, first, we have studied the thickness dependence of the polarization switching kinetics in HfO 2 -based ferroelectric. While static low-frequency polarization is comparable for different thickness, dynamic polarization switching speed is slower in thin Hf 0.5 Zr 0.5 O 2 (HZO) capacitors. Based on the analysis using the NLS model and physical characterization, thinner HZO contains smaller grains with orientation non-uniformity and more grain boundaries than thicker HZO, which can impede macroscopic polarization switching. We have also theoretically and experimentally studied the polar-axis alignment of a HfO 2 -based ferroelectric thin film. While in-plane polar orientation is stable in as-grown HZO, out-of-plane polarization can be dominant by applying electric field, which indicates the transition from in-plane polar to out-of-plane polar orientation in the ferroelectric phase grains. This is confirmed by calculating kinetic pathway using ab-initio calculation.

Formation of Uniform Crystal and Reduction of Electrical Variation in HfZrO$_2$ Ferroelectric Memory by Thermal Engineering

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Inductive Crystallization Effect of Atomic-Layer-deposited Hf0.5Zr0.5O2 Films for Ferroelectric Application

Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO2 Regulating Layer

Performance Improvement by Modifying Deposition Temperature in HfZrO x Ferroelectric Memory

High polarization, endurance and retention in sub-5 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ films

High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

Changing the properties of Hf$_{0.5}$Zr$_{0.5}$O$_{2}$ during cyclic repolarization of ferroelectric capacitors with different electrode materials

Tunable Defect Engineering of Mo/TiON Electrode in Angstrom-Laminated HfO$_2$/ZrO$_2$ Ferroelectric Capacitors towards Long Endurance and High Temperature Retention

Mesoscopic-scale grain formation in HfO2-based ferroelectric thin films and its impact on electrical characteristics

A grease for domain walls motion in HfO2-based ferroelectrics

Integration and Electrical Properties of Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Film on Bulk $\beta$ -Ga 2 O 3 (−201) Substrate for Memory Applications

Tensile stress regulated microstructures and ferroelectric properties of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films

Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates

Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf 0.5 Zr 0.5 O 2 thin films by thermal atomic layer deposition

Enhancement of the Ferroelectricity by Interface Engineering Observed by in Situ Transmission Electron Microscope

Impact of annealing temperature on the remanent polarization and tunneling electro-resistance of ferroelectric Al-doped HfOx tunnel junction memory.

A Study on the Hf0.5Zr0.5O2 Ferroelectric Capacitors Fabricated with Hf and Zr Chlorides

Ferroelectricity of pristine Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films fabricated by atomic layer deposition

A Stable Rhombohedral Phase in Ferroelectric Hf(Zr)1+xO2 Capacitor with Ultralow Coercive Field.

Structure evolution path of ferroelectric hafnium zirconium oxide nanocrystals under in-situ biasing