Abstract:Here, composition‐graded Hf1‐xZrxO2 ferroelectric thin films possessing more than two times faster polarization switching speed and better endurance characteristics than the conventional composition‐uniform one are demonstrated. The transition of polarization switching dynamics from the nucleation‐limited‐switching mechanism to the domain‐wall growth mechanism is responsible for these enhanced properties in the composition‐graded Hf1‐xZrxO2 thin films. The next‐generation semiconductor memories are essentially required for the advancements in modern electronic devices. Ferroelectric memories by HfO2‐based ferroelectric thin films (FE‐HfO2) have opened promising directions in recent years. Nevertheless, improving the polarization switching speed of FE‐HfO2 remains a critical task. In this study, it is demonstrated that the composition‐graded Hf1‐xZrxO2 (HZO) ferroelectric thin film has more than two times faster polarization switching speed than the conventional composition‐uniform one. Meanwhile, it has excellent ferroelectricity and improved endurance characteristics. It is also discovered that when the HZO thin film has a gradient composition, the polarization‐switching dynamics shifts from the nucleation‐limited‐switching mechanism to the domain‐wall growth mechanism. Moreover, the transition of switching dynamics is responsible for the faster speed and better endurance of the composition‐graded HZO thin film. These findings not only reveal the physical mechanisms of this material system but also provide a new strategy for memory devices having faster speed and higher endurance.

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Enhancement of the Ferroelectricity by Interface Engineering Observed by in Situ Transmission Electron Microscope

Antiferroelectric Phase Evolution in HfxZr1-xO2 Thin Film Toward High Endurance of Non-Volatile Memory Devices

Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf1−xZrxO2 Diodes

High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

High polarization, endurance and retention in sub-5 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ films

Electrochemical control of ferroelectricity in hafnia-based ferroelectric devices using reversible oxygen migration

Polarization description of successive ferroelectric switching in hafnia

Ferroelectric HfO$_2$ Memory Transistors with High-$κ$ Interfacial Layer and Write Endurance Exceeding $10^{10}$ Cycles

Growth of the Orthorhombic Phase and Inhibition of Charge Injection in Ferroelectric HfO2-based MFIS Memory Devices with a High-Permittivity Dielectric Seed Layer

Inductive Crystallization Effect of Atomic-Layer-deposited Hf0.5Zr0.5O2 Films for Ferroelectric Application

Effects of thickness and anisotropic strain on polarization switching properties of sub-10 nm epitaxial Hf 0.5 Zr 0.5 O 2 thin films

Highly Enhanced Polarization Switching Speed in HfO2‐based Ferroelectric Thin Films via a Composition Gradient Strategy

Formation of Uniform Crystal and Reduction of Electrical Variation in HfZrO$_2$ Ferroelectric Memory by Thermal Engineering

Programmable Ferroelectricity in Hf0.5Zr0.5O2 Enabled by Oxygen Defect Engineering.

Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO2 Regulating Layer

Ferroelectric HfO 2 Memory Transistors With High- κ Interfacial Layer and Write Endurance Exceeding 10 10 Cycles

Effects of Thickness and Anisotropic Strain on Polarization Switching Properties of Sub-10 Nm Epitaxial Hf0.5Zr0.5O2 Thin Films

Integration and Electrical Properties of Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Film on Bulk $\beta$ -Ga 2 O 3 (−201) Substrate for Memory Applications

Performance Improvement of Hf0.45Zr0.55O X Ferroelectric Field Effect Transistor Memory with Ultrathin Al-O Bonds-Modified InO X Channels