Abstract:The domain is an important characteristic of ferroelectric materials, and the type of domain can have significant effects on the performance of ferroelectric materials. In particular, the unique wake-up and fatigue effects of Hf0.5Zr0.5O2 (HZO) films severely restrict improvements in terms of film performance. Recently, using integrated differential phase contrast (iDPC) scanning transmission electron microscopy (STEM) imaging, we observed the existence of intrinsic tail-to-tail 90° domain structures, charged domain walls (CDWs), and polarization relaxation on the TiN/HZO/TiN interfaces of HZO films. Based on this experimental investigation, we establish a phase-field model of the tail-to-tail 90°CDWs based on the time-dependent Ginzburg–Landau equation. In our model, the tail-to-tail 90°CDW affects the mesoscopic domain switching through a built-in electric field, which, in turn, affects the macroscopic ferroelectric properties of the thin film. The following conclusions are drawn: (a) the CDWs that are distributed horizontally or vertically along the thickness of the film cause a A-wake-up effect (antiferroelectric-like wake-up) with double hysteresis loops or a S-wake-up effect (spindle-like wake-up), with thick portions in the middle and both ends points of the hysteresis loop; (b) the S-wake-up caused by the CDWs distributed along the thickness of the film performs badly in fatigue tests and is easier to break down. The model proposed herein reveals the mechanism of the wake-up effect in hafnium oxide-based ferroelectric films. It provides a theoretical basis for the development of a new type of hafnium oxide-based ferroelectric memory system.

A grease for domain walls motion in HfO2-based ferroelectrics

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Direct Atomic-Scale Visualization of the 90° Domain Walls and Their Migrations in Hf0.5Zr0.5O2 Ferroelectric Thin Films

Domain Wall Evolution in Hf 0.5 Zr 0.5 O 2 Ferroelectrics under Field-Cycling Behavior

Domain Wall Evolution in Hf0.5Zr0.5O2 Ferroelectrics under Field-Cycling Behavior

Inductive Crystallization Effect of Atomic-Layer-deposited Hf0.5Zr0.5O2 Films for Ferroelectric Application

Precise control of fatigue, wake-up, charge injection, and break-down in Hf0.5Zr0.5O2-based ferroelectric memories

Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf 1– x Zr x O 2

Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf1-xZrxO2

Mesoscopic-scale grain formation in HfO2-based ferroelectric thin films and its impact on electrical characteristics

Ferroelectricity of pristine Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films fabricated by atomic layer deposition

Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO2 Regulating Layer

Interfacial Regulation of Dielectric Properties in Ferroelectric Hf0.5Zr0.5O2 Thin Films

Intrinsic 90° charged domain wall and its effects on ferroelectric properties

Formation of Uniform Crystal and Reduction of Electrical Variation in HfZrO$_2$ Ferroelectric Memory by Thermal Engineering

High polarization, endurance and retention in sub-5 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ films

Effects of thickness and anisotropic strain on polarization switching properties of sub-10 nm epitaxial Hf 0.5 Zr 0.5 O 2 thin films

A Stable Rhombohedral Phase in Ferroelectric Hf(Zr)1+xO2 Capacitor with Ultralow Coercive Field.

Ultrafast Switching of Ferroelectric HfO2-ZrO2 under Low Voltage with Layered Structure

Enhancement of the Ferroelectricity by Interface Engineering Observed by in Situ Transmission Electron Microscope

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology