Physical Mechanisms Behind the Annealing Temperature Effect on Ferroelectric Phase in HfAlO FTJs by First-Principles Calculations

Zhenhai Li,Jialin Meng,Yongkai Liu,Jiajie Yu,Tianyu Wang,Kangli Xu,Hao Zhu,Qingqing Sun,David Wei Zhang,Lin Chen
DOI: https://doi.org/10.1109/ted.2023.3306730
2023-01-01
Abstract:To meet the needs of high speed and low power in the field of integrated circuits, hafnium-based ferroelectric tunnel junctions (FTJs) have been developed by doping different elements. In this study, we investigated the influence of annealing temperature on the ferroelectric properties of an Al-doped HfO2 device (HfAlO) using first-principle calculations and experimentally confirmed the simulation results. At annealing temperature >500 °C, TEM images showed that the HfAlO thin films had good crystallinity. At a critical annealing temperature of 600 °C, atomic force microscopy (AFM) images showed that the roughness reached a saturated state, which degraded HfAlO ferroelectricity. First-principle analyses verified that the orthogonal phase proportion in the film was the highest ( $\sim $ 30%) at 500 °C–550 °C due to decreased average bulk energy. The study paves way for HfAlO FTJs development for the next-generation in- memory computing applications.
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