Abstract:The discovery of ferroelectricity in both pure and doped HfO$_2$-based thin films have revitalized the interest in using ferroelectrics for nanoscale device applications. To take advantage of this silicon-compatible ferroelectric, fundamental questions such as the origin of ferroelectricity and better approach to controlled realization of ferroelectricity at the nanoscale need to be addressed. The emergence of robust polarization in HfO$_2$-based thin films is considered as the cumulative effect of various extrinsic factors such as finite-size effects and surface/interface effects of small grains, compressive stress, dopants, oxygen vacancies, and electric fields. The kinetic effects of phase transitions and their potential impacts on the emergence of ferroelectricity in HfO$_2$ at the nanoscale are not well understood. In this work, we construct the transition paths between different polymorphs of hafnia with density functional theory calculations and variable-cell nudged elastic band technique. We find that the transition barriers depend strongly on the mechanical boundary conditions and the transition from the tetragonal phase to the polar orthorhombic phase is a fast process kinetically under clamping. The effects of growth orientations and epitaxial strains on the relative stability of different phases of HfO$_2$ are investigated. The two orthorhombic phases, polar $Pca2_1$ and non-polar $Pbca$, become thermodynamically stable in (111)-oriented thin films over a wide range of epitaxial strain conditions. This work suggests a potential avenue to better stabilize the ferroelectric phase in HfO$_2$ thin films through substrate orientation engineering.

Insights into the Ferroelectric Orthorhombic Phase Formation in Doped HfO2 Thin Films

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance (>1014) of HfZrO Anti-ferroelectrics for DRAM Applications

Kinetical phase transition paths and phase stability in ferroelectric HfO 2

Control of intrinsic ferroelectricity and structural phase in pure HfO2 films via crystalline orientation

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Investigation of temperature-dependent ferroelectric properties of Y-doped HfO2 thin film prepared by medium-frequency reactive magnetron co-sputtering

Formation of a Polar Ferroelectric Phase in HFO2 Films Depending on Annealing Conditions and Chemical Properties of Impurities

Ferroelectricity in the Al doped HfO2

Effects of Growth Orientations and Epitaxial Strains on Phase Stability of HfO$_2$ Thin Films

Optimizing Annealing Process for Ferroelectric Y‐Doped HfO 2 Thin Films by All‐Inorganic Aqueous Precursor Solution

Structural and Ferroelectric Transition in Few-Layer HfO2 Films by First Principles Calculations

Stabilization of Competing Ferroelectric Phases of HfO 2 under Epitaxial Strain

Orientation control of phase transition and ferroelectricity in Al-doped HfO2 thin films

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Understanding the Effect of Oxygen Content on Ferroelectric Properties of Al-Doped HfO Thin Films

Physical Mechanisms Behind the Annealing Temperature Effect on Ferroelectric Phase in HfAlO FTJs by First-Principles Calculations

Evolution of ferroelectricity with annealing temperature and thickness in sputter deposited undoped HfO$_2$ on silicon

Phase transitions in HfO2 probed by first-principles computations

Progress in Computational Understanding of Ferroelectric Mechanisms in HfO$_2$

Ferroelectric structural transition in hafnium oxide induced by charged oxygen vacancies