Abstract:Combining the experimental characterization with the large-scale density functional theory calculations based on finite-element discretization (DFT-FE), we address the stabilization of polar orthorhombic phases (o-HfO2) in Al:HfO2 nanofilms by means of the atomic registry distortions and lattice deformation caused by Al substitutional defects (Al-Hf) and Schottky defects (2Al(Hf) + V-O) in tetragonal phases (t-HfO2) or monoclinic phases (m-HfO2). The phase transformation directly from the t-HfO2 into polar o-HfO2 are also elucidated within a heterogeneous distribution of Al dopants in both t-HfO2 bulk crystal structure and Al:HfO2 nanofilm. It is revealed using large-scale DFT calculations that the Al substitutional defects (Al-Hf) or the Schottky defect (2Al(Hf) + V-O) could induce the highly extended atomic registry distortions or lattice deformation in the t- and m-HfO2 phases, but such effects are greatly diminished in ferroelectric orthorhombic phase. By purposely engineering the multiple Al-Hf defects to form dopant-rich layers in paraelectric t-HfO2 nanofilm or bulk crystal, the induced extended lattice distortions surrounding the defect sites exhibit the shearing-like atomic displacement vector field. The large-scale DFT calculations further predicted that the shearing-like microscopic lattice distortions could directly induce the phase transformation from the t-HfO2 into polar orthorhombic phase in both Al:HfO2 bulk crystal and nanofilms, leading to the large remanent polarization observed in Al:HfO2 nanofilms with the presence of Al-rich layers. The current study demonstrates that the ferroelectricity of HfO2 bulk crystal or thin film can be optimized and tuned by delicately engineering both the distribution and concentration of Al dopants in atomic layer deposition without applying the top capping electrode, providing the extra flexibility for designing the HfO2 based electronic devices in the future.

Formation of a Polar Ferroelectric Phase in HFO2 Films Depending on Annealing Conditions and Chemical Properties of Impurities

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Ferroelectricity in Al-doped HfO2 on Highly Doped Si Substrate

Contribution of oxygen vacancies to the phase transition and ferroelectricity of the Al:HfO<sub>2</sub>films

Distinguishing the Rhombohedral Phase from Orthorhombic Phases in Epitaxial Doped HfO2 Ferroelectric Films

Stabilization of Competing Ferroelectric Phases of HfO 2 under Epitaxial Strain

Contribution of oxygen vacancies to phase transition and ferroelectricity of Al:HfO2films.

Evolution of ferroelectricity with annealing temperature and thickness in sputter deposited undoped HfO$_2$ on silicon

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Contribution of Oxygen Vacancies to Phase Transition and Ferroelectricity of Al:HfO2 Films

Contribution of oxygen vacancies to the phase transition and ferroelectricity of the Al:HfO 2 films

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Insights into the Ferroelectric Orthorhombic Phase Formation in Doped HfO2 Thin Films

Structural and Ferroelectric Transition in Few-Layer HfO2 Films by First Principles Calculations

Modulating the Microscopic Lattice Distortions Through the Al-rich Layers for Boosting the Ferroelectricity in Al:HfO2 Nanofilms

Observing Large Ferroelectric Polarization In Top-Electrode-Free Al:Hfo2 Thin Films With Al-Rich Strip Structures

Interface control of tetragonal ferroelectric phase in ultrathin Si-doped HfO2 epitaxial films

Effects of Growth Orientations and Epitaxial Strains on Phase Stability of HfO$_2$ Thin Films

Regulating Crystal Structure and Ferroelectricity in Sr Doped HfO2 Thin Films Fabricated by Metallo-Organic Decomposition

Ferroelectricity in the Al doped HfO2

Ferroelectric structural transition in hafnium oxide induced by charged oxygen vacancies