Abstract:The emergence of ferroelectricity near the morphotropic phase boundary in BiFeO3 directly during thin‐film growth is explored. The films form purely in the tetragonal phase with zero critical thickness. Signatures of monoclinic phase coexistence only appear upon cooling. The striking robustness of the high‐temperature tetragonal phase against depolarizing‐field‐induced domain formation enables the stabilization of metastable monoclinic structure at room temperature. Multiferroic BiFeO3 exhibits a morphotropic phase boundary at large compressive strain that merges metastable phases of tetragonal (T) and rhombohedral (R) character resulting in giant ferroelectric and electromechanical responses. To utilize this functionality in devices, it is essential to understand the response of these ferroelectric phases to the environment of a nanoscale heterostructure. Here, the emergence of ferroelectricity near the morphotropic phase boundary in BiFeO3 is explored directly during thin‐film growth, using optical second harmonic generation. It is found that the epitaxial films form at the growth temperature purely in the T phase with zero critical thickness for the spontaneous polarization. Signatures of monoclinic T‐like and R‐like phases only appear upon sample cooling. The robustness of a single‐domain configuration in the high‐temperature T phase is furthermore demonstrated during growth of capacitor‐like metal | ferroelectric | metal heterostructures. Here, a reduction in tetragonality, rather than multidomain formation, lowers the electrostatic energy in the few‐unit‐cell thickness regime. For this lower tetragonality, density‐functional calculations and scanning transmission electron microscopy point to the stabilization of a novel metastable monoclinic structure upon cooling toward room temperature. The synergistic combination of strain and electrostatic phase stabilization in BiFeO3 heterostructures hence provides a basis for designing new ferroelectric phases and ultrathin ferroelectric devices.

Effects of Growth Orientations and Epitaxial Strains on Phase Stability of HfO$_2$ Thin Films

Stabilization of Competing Ferroelectric Phases of HfO 2 under Epitaxial Strain

Effects of Strain and Film Thickness on the Stability of the Rhombohedral Phase of HfO2

Disentangling stress and strain effects in ferroelectric HfO2

Effects of Strain and Film Thickness on the Stability of the Rhombohedral Phase of Hf O 2

Structural and Ferroelectric Transition in Few-Layer HfO2 Films by First Principles Calculations

Distinguishing the Rhombohedral Phase from Orthorhombic Phases in Epitaxial Doped HfO2 Ferroelectric Films

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress

Control of intrinsic ferroelectricity and structural phase in pure HfO2 films via crystalline orientation

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Orientation control of phase transition and ferroelectricity in Al-doped HfO2 thin films

Ferroelectricity in Hafnia: The Origin of Nanoscale Stabilization

Epitaxial ferroelectric hafnia stabilized by symmetry constraints

Effect of film thickness on phase structure of epitaxial non-doped hafnium oxide films

Structural Stability and Polarization Analysis of Rhombohedral Phases of HfO2

Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films

Structure and stability of La- and hole-doped hafnia with/without epitaxial strain

Flexoelectricity-stabilized ferroelectric phase with enhanced reliability in ultrathin La:HfO2 films

Phase transitions in HfO2 probed by first-principles computations

Combined Electrostatic and Strain Engineering of BiFeO3 Thin Films at the Morphotropic Phase Boundary