Abstract:The discovery of ferroelectricity in both pure and doped HfO$_2$-based thin films have revitalized the interest in using ferroelectrics for nanoscale device applications. To take advantage of this silicon-compatible ferroelectric, fundamental questions such as the origin of ferroelectricity and better approach to controlled realization of ferroelectricity at the nanoscale need to be addressed. The emergence of robust polarization in HfO$_2$-based thin films is considered as the cumulative effect of various extrinsic factors such as finite-size effects and surface/interface effects of small grains, compressive stress, dopants, oxygen vacancies, and electric fields. The kinetic effects of phase transitions and their potential impacts on the emergence of ferroelectricity in HfO$_2$ at the nanoscale are not well understood. In this work, we construct the transition paths between different polymorphs of hafnia with density functional theory calculations and variable-cell nudged elastic band technique. We find that the transition barriers depend strongly on the mechanical boundary conditions and the transition from the tetragonal phase to the polar orthorhombic phase is a fast process kinetically under clamping. The effects of growth orientations and epitaxial strains on the relative stability of different phases of HfO$_2$ are investigated. The two orthorhombic phases, polar $Pca2_1$ and non-polar $Pbca$, become thermodynamically stable in (111)-oriented thin films over a wide range of epitaxial strain conditions. This work suggests a potential avenue to better stabilize the ferroelectric phase in HfO$_2$ thin films through substrate orientation engineering.

Effects of Strain and Film Thickness on the Stability of the Rhombohedral Phase of Hf O 2

Effects of Strain and Film Thickness on the Stability of the Rhombohedral Phase of HfO2

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

The structural stability and polarization analysis of rhombohedral phase HfO2

Structural Stability and Polarization Analysis of Rhombohedral Phases of HfO2

Disentangling stress and strain effects in ferroelectric HfO2

Structural and Ferroelectric Transition in Few-Layer HfO2 Films by First Principles Calculations

Effects of Growth Orientations and Epitaxial Strains on Phase Stability of HfO$_2$ Thin Films

Stabilization of Competing Ferroelectric Phases of HfO 2 under Epitaxial Strain

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Independent Effects of Dopant, Oxygen Vacancy, and Specific Surface Area on Crystal Phase of HfO<sub>2</sub> Thin Films towards General Parameters to Engineer the Ferroelectricity

Optimal Parameter-Space for Stabilizing the Ferroelectric Phase of Hf0.5Zr0.5O2 Thin-Films under Strain and Electric Fields

Phase Stability and Phase Transition Pathways in the Rhombohedral Phase of HfO2

Kinetical phase transition paths and phase stability in ferroelectric HfO 2

Stability of ferroelectric and antiferroelectric hafnium–zirconium oxide thin films

Intrinsic Instability of Rhombohedral (Hf, Zr)O2 Phases and Endurance Crisis of Hf-based Ferroelectric Devices

Effects of Thickness and Anisotropic Strain on Polarization Switching Properties of Sub-10 Nm Epitaxial Hf0.5Zr0.5O2 Thin Films

Interface Effects Induced by a Zr O 2 Seed Layer on the Phase Stability and Orientation of Hf O 2 Ferroelectric Thin Films: A First-Principles Study

Distinguishing the Rhombohedral Phase from Orthorhombic Phases in Epitaxial Doped HfO2 Ferroelectric Films

Stabilization of Thick, Rhombohedral Hf0.5Zr0.5O2 Epilayer on C-Plane ZnO