Abstract:After the discovery of ferroelectricity in HfO$_2$ based thin films a decade ago, ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) thin films are frequently being utilized in the CMOS (Complementary Metal- Oxide Semiconductor) and logic devices, thanks to their large remnant polarization, high retention and endurance. A great deal of effort has been made towards understanding the origin of ferroelectricity in epitaxial HZO thin films and controlling the microstructure at the atomic level which governs the ferroelectric phase. Nevertheless, the HZO films still suffer from fundamental questions, such as (1) the vagueness of interfacial mechanisms between HZO, buffer layer and the substrate which controls the polar phase; (2) the nature of the metastable polar phase responsible for the ferroelectricity, be it orthorhombic or rhombohedral; which are poorly understood. Here, we have addressed these issues by employing the in-situ reflection high energy electron diffraction -- assisted pulsed laser deposition and mapping the asymmetrical polar maps on high quality HZO films grown on functional perovskite oxide substrates. The interface between La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO) and the substrate is shown to be quite important, and a slightly rougher interface of the former destabilizes the ferroelectric phase of HZO irrespective of well-controlled growth of the ferroelectric layers. A rhombohedral-like symmetry of HZO unit cell is extracted through the x-ray diffraction asymmetrical polar maps. The ferroelectric measurements on a nearly 7 nm HZO film on STO(001) substrate display a remnant polarization close to 8 uC/cm$^2$. These results highlight the complexities involved at the atomic scale interface in the binary oxides thin films and can be of importance to the HfO$_2$-based ferroelectric community which is still at its infancy.

Intrinsic Instability of Rhombohedral (Hf, Zr)O2 Phases and Endurance Crisis of Hf-based Ferroelectric Devices

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance <tex>$(> 10^{14})$</tex> of HfZrO Anti-ferroelectrics for DRAM Applications

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance (>1014) of HfZrO Anti-ferroelectrics for DRAM Applications

Phase Stability and Phase Transition Pathways in the Rhombohedral Phase of HfO2

Rhombohedral R3 Phase of Mn‐Doped Hf0.5Zr0.5O2 Epitaxial Films with Robust Ferroelectricity

Intrinsic Defect Limit To The Growth Of Orthorhombic Hfo2 And (Hf,Zr)O-2 With Strong Ferroelectricity: First-Principles Insights

Structural Stability and Polarization Analysis of Rhombohedral Phases of HfO2

Intrinsic Defect Limit to the Growth of Orthorhombic HfO 2 and (Hf,Zr)O 2 with Strong Ferroelectricity: First‐Principles Insights

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Complexities in the growth and stabilization of polar phase in the Hf$_{0.5}$Zr$_{0.5}$O$_2$ thin films grown by Pulsed Laser Deposition

Stabilization of Competing Ferroelectric Phases of HfO 2 under Epitaxial Strain

Stabilization of thick, rhombohedral Hf 0.5 Zr 0.5 O 2 epilayer on c-plane ZnO

Effects of Strain and Film Thickness on the Stability of the Rhombohedral Phase of HfO2

The structural stability and polarization analysis of rhombohedral phase HfO2

Effects of Strain and Film Thickness on the Stability of the Rhombohedral Phase of Hf O 2

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Stabilization of the epitaxial rhombohedral ferroelectric phase in ZrO2 by surface energy

Guidelines for the stabilization of a polar rhombohedral phase in epitaxial Hf0.5Zr0.5O2 thin films

Distinguishing the Rhombohedral Phase from Orthorhombic Phases in Epitaxial Doped HfO2 Ferroelectric Films

A Stable Rhombohedral Phase in Ferroelectric Hf(Zr)1+xO2 Capacitor with Ultralow Coercive Field.