Abstract:Ferroelectricity in sputtered undoped-HfO$_2$ is attractive for composition control for low power and non-volatile memory and logic applications. Unlike doped HfO$_2$, evolution of ferroelectricity with annealing and film thickness effect in sputter deposited undoped HfO$_2$ on Si is not yet reported. In present study, we have demonstrated the impact of post metallization annealing temperature and film thickness on ferroelectric properties in dopant-free sputtered HfO$_2$ on Si-substrate. A rich correlation of polarization with phase, lattice constant, and crystallite size and interface reaction is observed. First, anneal temperature shows o-phase saturation beyond 600 oC followed by interface reaction beyond 700 oC to show an optimal temperature window on 600-700 oC. Second, thickness study at the optimal temperature window shows an alluring o-phase crystallite scaling with thickness till a critical thickness of 20 nm indicating that the films are completely o-phase. However, the lattice constants (volume) are high in the 15-20 nm thickness range which correlates with the enhanced value of 2Pr. Beyond 20 nm, crystallite scaling with thickness saturates with the correlated appearance of m-phase and reduction in 2Pr. The optimal thickness-temperature window range of 15-20 nm films annealed at 600-700 oC show 2Pr of ~35.5 micro-C/cm$^2$ is comparable to state-of-the-art. The robust wakeup-free endurance of ~$10^$8 cycles showcased in the promising temperature-thickness window has been identified systematically for non-volatile memory applications.

Investigation of temperature-dependent ferroelectric properties of Y-doped HfO2 thin film prepared by medium-frequency reactive magnetron co-sputtering

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Optimizing Annealing Process for Ferroelectric Y‐Doped HfO 2 Thin Films by All‐Inorganic Aqueous Precursor Solution

Annealing Temperature Dependent Microstructure and Optical Properties of HfxTi1-xO2 Thin Films

Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.

Effect of annealing protection atmosphere on the ferroelectric yttrium doped hafnium oxide thin films

Effect of Y concentration and film thickness on microstructure and electrical properties of HfO2 based thin films

The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film

Ferroelectric Properties of Gradient Doped Y2O3:HfO2 Thin Films Grown by Pulsed Laser Deposition

Insights into the Ferroelectric Orthorhombic Phase Formation in Doped HfO2 Thin Films

New approach for fabrication of annealing-free ferroelectric HfO2-based films at room temperature

Characterization Upon Potential Properties of Hfo2 Stabilized by Y2o3 Films As Cubic Phase

Kinetically stabilized ferroelectricity in bulk single-crystalline HfO2:Y

Orientation control of phase transition and ferroelectricity in Al-doped HfO2 thin films

Large anisotropic room-temperature ferromagnetism in yttrium-doped HfO2 thin film

Effects of Substrate and Annealing Conditions on the Ferroelectric Properties of Non-Doped HfO2 Deposited by RF Plasma Sputter

Ferroelectricity in the Al doped HfO2

Ferroelectricity of pristine Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films fabricated by atomic layer deposition

Structure and Dielectric Properties of HfO2 Thin Films

Evolution of ferroelectricity with annealing temperature and thickness in sputter deposited undoped HfO$_2$ on silicon