Abstract:The crystal structure as well as electrical properties of Y-doped HfO2 thin films were evaluated. The thin films were produced by co-sputtering with Y and Hf metal targets in an argon/oxygen atmosphere. A 10 nm-thick HfO2 thin film with 1.5 at.% yttrium content deposited at 200 °C and annealed at 850 °C for 40 s in an inert nitrogen atmosphere shows excellent ferro-electricity with a significant remnant polarization (Pr∼20 μC/cm2) and a low leakage current density (about 10−6 A/cm2 at 1 MV/cm). The crystal structure and ferroelectric properties of Y-doped HfO2 thin films exhibit strong temperature dependence. The ferroelectric phase (orthorhombic phase) fraction was observed to be suppressed in favor of the para-electric phase (monoclinic phase) with increasing deposition temperature through analyses grazing incidence X-ray diffraction and high resolution transmission electron microscopy. Through the analysis of polarization and current density characteristics, a correlation between decreasing remnant polarization and a greater leakage current density was revealed as the deposition temperature was increased. The origin of the degradation of the ferro-electricity of Y-doped HfO2 films with elevated deposition temperature was attributed to the formation of m-phase which was unfavorable for promoting transition to the ferroelectric o-phase during post-deposition annealing.

Characterization Upon Potential Properties of Hfo2 Stabilized by Y2o3 Films As Cubic Phase

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

A First-Principles Study on the Stable Phase in Yttrium-Doped HFO2

Investigation of temperature-dependent ferroelectric properties of Y-doped HfO2 thin film prepared by medium-frequency reactive magnetron co-sputtering

Kinetically stabilized ferroelectricity in bulk single-crystalline HfO2:Y

Vibrational fingerprints of ferroelectric HfO2

Kinetically-stabilized Ferroelectricity in Bulk Singlecrystalline HfO2:Y without Wake-up Effects

Vibrational fingerprints of ferroelectric hafnia

Effect of Y concentration and film thickness on microstructure and electrical properties of HfO2 based thin films

Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.

Thermal and Voltage Instabilities of Hafnium Oxide Films Prepared by Sputtering Technique

Tailoring the initial characterization of fully stabilized HfO2 with Y2O3/Ta2O5

Ferroelectric Properties of Gradient Doped Y2O3:HfO2 Thin Films Grown by Pulsed Laser Deposition

Effects of Y Doping on the Structural Stability and Defect Properties of Cubic HfO2

Effects of Strain and Film Thickness on the Stability of the Rhombohedral Phase of Hf O 2

The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film

Characterization of HfO2 Optical Coatings Deposited by MF Magnetron Sputtering

Effects of Strain and Film Thickness on the Stability of the Rhombohedral Phase of HfO2

Fabrication and Characterization of Pulsed Laser Deposited Hfo2 Films for High-K Gate Dielectric Applications

Structure and Dielectric Properties of HfO2 Thin Films