Abstract:Determining the stability of complex phases in HfO2 is fundamental to advancing its development and application as ferroelectric material. However, there is ongoing debate regarding whether the ferroelectric phase of HfO2 originates from the orthorhombic phase or the rhombohedral one. Using first-principles calculations with symmetry group and phonon structure analysis, we have derived multiple phase transitions and ferroelectric switching pathways for the rhombohedral phase, and analyzed their static and dynamic stability. The results indicate that the R3m phase, characterized by imaginary frequencies, is a metastable structure that spontaneously transitions to the tetragonal one through multiple pathways. Although the R3 phase lacks imaginary frequencies, the high formation energy due to internal stress leads to all its ferroelectric switching pathways decaying to lower energy orthorhombic or tetragonal phases. Additionally, different Zr distributions in Hf0.5Zr0.5O2 disrupt the spatial group symmetry of the R3 phase, causing it to spontaneously transition to orthorhombic or monoclinic phases. Consequently, both the phase stability and ferroelectric cycling endurance of the rhombohedral phase are inferior to those of the orthorhombic phase for practical applications. These findings are crucial for experimentally determining the phase structure of HfO2 and further developing its ferroelectric mechanisms and potential.

A First-Principles Study on the Stable Phase in Yttrium-Doped HFO2

Effects of Y Doping on the Structural Stability and Defect Properties of Cubic HfO2

First Principle Study on Oxygen Vacancy Induced Ferroelectricity in HFO2-Based Ferroelectrics

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Kinetically stabilized ferroelectricity in bulk single-crystalline HfO2:Y

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Phase transitions in HfO2 probed by first-principles computations

Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.

Characterization Upon Potential Properties of Hfo2 Stabilized by Y2o3 Films As Cubic Phase

Kinetically-stabilized Ferroelectricity in Bulk Singlecrystalline HfO2:Y without Wake-up Effects

Ferroelectric structural transition in hafnium oxide induced by charged oxygen vacancies

Vibrational fingerprints of ferroelectric HfO2

Structural and Electrical Properties of Reactive Magnetron Sputtered Yttrium-Doped HfO 2 Films

Phase Stability and Phase Transition Pathways in the Rhombohedral Phase of HfO2

Kinetical phase transition paths and phase stability in ferroelectric HfO 2

Charged Oxygen Vacancy Induced Ferroelectric Structure Transition in Hafnium Oxide

Phase Competition in HfO$_2$ with Applied Electric Field from First Principles

Vibrational fingerprints of ferroelectric hafnia

Phase Properties of Different HfO2 Polymorphs: A DFT-Based Study

Insights into the Origin of Robust Ferroelectricity in HfO2 -Based Thin Films from the Order-Disorder Transition Driven by Vacancies

Influence of Oxygen Pressure on the Ferroelectricity of Pulsed Laser Deposition Fabricated Epitaxial Y-doped HfO2