Abstract:This report introduces a simple method for controlling orientation in solution‐processed ferroelectric La:HfO2 thin films through layer‐by‐layer crystallization and control of annealing atmosphere. By introducing oxygen in the atmosphere, a straightforward approach to achieve 002 orientation is presented. As the polarization aligns parallel to the applied electric field, measured remanent polarization reaches a high value of 15 μC cm−2. Chemical Solution Deposition enables low‐cost fabrication of ferroelectric HfO2 films suitable for piezoelectric applications. Control of processing parameters is of utmost importance to obtain high‐quality functional films. However, the impact of the annealing atmosphere on ferroelectric properties of solution‐processed HfO2 films is not clear. In this work, the influence of annealing atmosphere and growth methods on orientation, density and electrical properties of La:HfO2 films is studied. The 45 nm‐thick films are grown by two routes, conventional (crystallization of the final 45 nm‐thick film) and layer‐by‐layer (intermediate crystallizations of 5 nm‐thick films). Annealing is performed in N2:O2 and Ar atmosphere. Films grown by layer‐by‐layer method in an oxygen‐rich atmosphere tend to have higher density (87% of theoretical density) and remanent polarization (15 μC cm–2) than the conventional films (density and remanent polarization of 80% and 7.5 μC cm‐2). Secondary ion mass spectrometry reveals higher amounts of carbon presence in the conventional films annealed in Ar. For layer‐by‐layer films, the ability to control the preferential out‐of‐plane orientation from (111) to (002) simply by changing the annealing atmosphere, is demonstrated. The results can guide the path toward high‐quality thicker films for piezoelectric applications.

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Annealing Temperature Dependent Microstructure and Optical Properties of HfxTi1-xO2 Thin Films

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Investigation of temperature-dependent ferroelectric properties of Y-doped HfO2 thin film prepared by medium-frequency reactive magnetron co-sputtering

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

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Effects of Substrate and Annealing Conditions on the Ferroelectric Properties of Non-Doped HfO2 Deposited by RF Plasma Sputter

Effect of Y concentration and film thickness on microstructure and electrical properties of HfO2 based thin films

Understanding the Effect of Oxygen Content on Ferroelectric Properties of Al-Doped HfO Thin Films

Effects of Annealing Temperature on the Structures, Ferroelectric and Magnetic Properties of Aurivillius Bi5ti3feo15 Polycrystalline Films

Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.

Annealing behaviors of structural, interfacial and optical properties of HfO 2 thin films prepared by plasma assisted reactive pulsed laser deposition

High-magnetic field annealing effect on room-temperature ferromagnetism enhancement of un-doped HfO 2 thin films

Effect on passivation mechanism and properties of HfO 2 /crystalline-Si interface under different annealing atmosphere

Control of Ferroelectricity in Solution‐Processed Hafnia Films Through Annealing Atmosphere

Impact of post deposition annealing in O2 ambient on structural properties of nanocrystalline hafnium oxide thin film

New approach for fabrication of annealing-free ferroelectric HfO2-based films at room temperature

Effects of annealing conditions on structural and ferroelectric properties of CeO2-HfO2 solid solution thin films on InAs substrates fabricated by chemical solution deposition

Tensile Stress Regulated Microstructures and Ferroelectric Properties of Hf0.5Zr0.5O2 Films

Insights into the Ferroelectric Orthorhombic Phase Formation in Doped HfO2 Thin Films