Abstract:Ferroelectricity in sputtered undoped-HfO$_2$ is attractive for composition control for low power and non-volatile memory and logic applications. Unlike doped HfO$_2$, evolution of ferroelectricity with annealing and film thickness effect in sputter deposited undoped HfO$_2$ on Si is not yet reported. In present study, we have demonstrated the impact of post metallization annealing temperature and film thickness on ferroelectric properties in dopant-free sputtered HfO$_2$ on Si-substrate. A rich correlation of polarization with phase, lattice constant, and crystallite size and interface reaction is observed. First, anneal temperature shows o-phase saturation beyond 600 oC followed by interface reaction beyond 700 oC to show an optimal temperature window on 600-700 oC. Second, thickness study at the optimal temperature window shows an alluring o-phase crystallite scaling with thickness till a critical thickness of 20 nm indicating that the films are completely o-phase. However, the lattice constants (volume) are high in the 15-20 nm thickness range which correlates with the enhanced value of 2Pr. Beyond 20 nm, crystallite scaling with thickness saturates with the correlated appearance of m-phase and reduction in 2Pr. The optimal thickness-temperature window range of 15-20 nm films annealed at 600-700 oC show 2Pr of ~35.5 micro-C/cm$^2$ is comparable to state-of-the-art. The robust wakeup-free endurance of ~$10^$8 cycles showcased in the promising temperature-thickness window has been identified systematically for non-volatile memory applications.

Effects of annealing conditions on structural and ferroelectric properties of CeO2-HfO2 solid solution thin films on InAs substrates fabricated by chemical solution deposition

Improvement of remanent polarization of CeO 2 –HfO 2 solid solution thin films on Si substrates by chemical solution deposition

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Ferroelectricity in Ce0.2-HfO2 Films Around 500 Nm in Thickness

Optimizing Annealing Process for Ferroelectric Y‐Doped HfO2 Thin Films by All‐Inorganic Aqueous Precursor Solution

Effect of Annealing Temperature on the Structure and Ferromagnetic Properties of Co-doped CeO2 Diluted Magnetic Oxide Thin Films

Optimizing Annealing Process for Ferroelectric Y‐Doped HfO 2 Thin Films by All‐Inorganic Aqueous Precursor Solution

Effects of Annealing Temperature on the Structures, Ferroelectric and Magnetic Properties of Aurivillius Bi5ti3feo15 Polycrystalline Films

Influence of Rapid Thermal Annealing on the Structure and Electrical Properties of Ce-Doped Hfo2 Gate Dielectric

Large Polarization of Hf 0.5 Zr 0.5 O x Ferroelectric Film on InGaAs with Electric-Field Cycling and Annealing Temperature Engineering

Effect Of The Hf Content On The Microstructure And Ferroelectric Properties Of Hfxzr1-Xo2 Thin Films Using An All-Inorganic Aqueous Precursor Solution

Evolution of ferroelectricity with annealing temperature and thickness in sputter deposited undoped HfO$_2$ on silicon

Ferroelectricity in Al-doped HfO2 on Highly Doped Si Substrate

High Annealing Temperature Assisted Broadening of the Ferroelectric Concentration Window in Al:HfO2 MFS Structures

Improvement of Ferroelectricity in Ce-Doped Hf0.5Zr0.5O2 Thin Films

Modified ferroelectric and photovoltaic properties of BiFe 0.91 Zr 0.09 O 3 thin films via altered annealing atmospheres

Effect of annealing temperature on oxygen vacancy concentrations of nanocrystalline CeO2 film

The ferroelectric and piezoelectric properties of (Hf1−x Ce x )O2 films on indium tin oxide/Pt/TiO x /SiO2/(100)Si substrates obtained using a no-heating radio-frequency magnetron sputtering deposition method

Effect of annealing protection atmosphere on the ferroelectric yttrium doped hafnium oxide thin films

The Effect of Annealing Heat Treatment on Structural and Optical Properties of Ce-Doped Zno Thin Films

Annealing Effects on the Optical and Structural Properties of Al2O3/SiO2 Films As UV Antireflection Coatings on 4H-Sic Substrates