Abstract:Since the first report of ferroelectricity in nanoscale HfO$_2$-based thin films in 2011, this silicon-compatible binary oxide has quickly garnered intense interest in academia and industry, and continues to do so. Despite its deceivingly simple chemical composition, the ferroelectric physics supported by HfO$_2$ is remarkably complex, arguably rivaling that of perovskite ferroelectrics. Computational investigations, especially those utilizing first-principles density functional theory (DFT), have significantly advanced our understanding of the nature of ferroelectricity in these thin films. In this review, we provide an in-depth discussion of the computational efforts to understand ferroelectric hafnia, comparing various metastable polar phases and examining the critical factors necessary for their stabilization. The intricate nature of HfO$_2$ is intimately related to the complex interplay among diverse structural polymorphs, dopants and their charge-compensating oxygen vacancies, and unconventional switching mechanisms of domains and domain walls, which can sometimes yield conflicting theoretical predictions and theoretical-experimental discrepancies. We also discuss opportunities enabled by machine-learning-assisted molecular dynamics and phase-field simulations to go beyond DFT modeling, probing the dynamical properties of ferroelectric HfO$_2$ and tackling pressing issues such as high coercive fields.

What problem does this paper attempt to address?

The main focus of this paper is the computational understanding of the ferroelectric mechanism in hafnium oxide (HfO2). Since the first report of ferroelectricity in nanoscale hafnium oxide films in 2011, this silicon-compatible binary oxide has attracted widespread attention in the academia and industry. Despite its seemingly simple chemical composition, the ferroelectric physics supported by hafnium oxide is highly complex and can even rival that of perovskite ferroelectrics. Computational studies, particularly those based on first-principles density functional theory (DFT), have greatly advanced our fundamental understanding of the ferroelectric properties in these films. The paper delves into the computational work, comparing different stable polar phases and analyzing key factors that maintain their stability. The complexity of hafnium oxide arises from the interactions between various structural polymorphs, dopants, charge-compensating oxygen vacancies, and non-traditional domain and domain-wall switching mechanisms, which could lead to conflicts between theoretical predictions and experimental results. Moreover, the paper explores the potential of machine learning-assisted molecular dynamics and phase-field simulations in surpassing DFT modeling, studying the dynamic properties of ferroelectric hafnium, and addressing pressing issues such as high coercive field. The paper presents various structural polymorphs of hafnium oxide, including non-polar and polar phases, and discusses the possible origins of observed ferroelectricity in films prepared using different techniques, possibly stemming from polar phases. It also discusses various external factors that stabilize ferroelectric phases, such as dopants, oxygen defects, and strain, as well as the main challenges affecting the applications of ferroelectric hafnium, such as high coercive field. Through these analyses, the paper seeks to clarify the exact symmetry and stability of ferroelectric phases in hafnium oxide and provide directions for future computational modeling of ferroelectric hafnium.

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