Abstract:The domain is an important characteristic of ferroelectric materials, and the type of domain can have significant effects on the performance of ferroelectric materials. In particular, the unique wake-up and fatigue effects of Hf0.5Zr0.5O2 (HZO) films severely restrict improvements in terms of film performance. Recently, using integrated differential phase contrast (iDPC) scanning transmission electron microscopy (STEM) imaging, we observed the existence of intrinsic tail-to-tail 90° domain structures, charged domain walls (CDWs), and polarization relaxation on the TiN/HZO/TiN interfaces of HZO films. Based on this experimental investigation, we establish a phase-field model of the tail-to-tail 90°CDWs based on the time-dependent Ginzburg–Landau equation. In our model, the tail-to-tail 90°CDW affects the mesoscopic domain switching through a built-in electric field, which, in turn, affects the macroscopic ferroelectric properties of the thin film. The following conclusions are drawn: (a) the CDWs that are distributed horizontally or vertically along the thickness of the film cause a A-wake-up effect (antiferroelectric-like wake-up) with double hysteresis loops or a S-wake-up effect (spindle-like wake-up), with thick portions in the middle and both ends points of the hysteresis loop; (b) the S-wake-up caused by the CDWs distributed along the thickness of the film performs badly in fatigue tests and is easier to break down. The model proposed herein reveals the mechanism of the wake-up effect in hafnium oxide-based ferroelectric films. It provides a theoretical basis for the development of a new type of hafnium oxide-based ferroelectric memory system.

The atomic-scale domain wall structure and motion in HfO2-based ferroelectrics: A first-principle study

Direct Atomic-Scale Visualization of the 90° Domain Walls and Their Migrations in Hf0.5Zr0.5O2 Ferroelectric Thin Films

Domain Wall Evolution in Hf0.5Zr0.5O2 Ferroelectrics under Field-Cycling Behavior

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Domain Wall Evolution in Hf 0.5 Zr 0.5 O 2 Ferroelectrics under Field-Cycling Behavior

Symmetry of Ferroelectric Switching and Domain Walls in Hafnium Dioxide

Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO$_2$

Progress in Computational Understanding of Ferroelectric Mechanisms in HfO$_2$

Progress in computational understanding of ferroelectric mechanisms in HfO 2

Hybrid Functional Study on the Ferroelectricity of Domain Walls with O-vacancies in PbTiO3

Intrinsic 90° charged domain wall and its effects on ferroelectric properties

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Atomic-Scale Scanning of Domain Network in the Ferroelectric HfO2 Thin Film

Phase transitions in HfO2 probed by first-principles computations

First Principle Study on Oxygen Vacancy Induced Ferroelectricity in HFO2-Based Ferroelectrics

3D ferroelectric phase field simulations of polycrystalline multi-phase hafnia and zirconia based ultra-thin films

Structural and Ferroelectric Transition in Few-Layer HfO2 Films by First Principles Calculations

Atomic-scale Mechanisms of Ferroelastic Domain-Wall-mediated Ferroelectric Switching

Oxygen vacancies stabilized 180° charged domain walls in ferroelectric hafnium oxide

A grease for domain walls motion in HfO2-based ferroelectrics

Precise structure and polarization determination of Hf0.5Zr0.5O2 with electron ptychography