Abstract:Oxygen vacancies in two-dimensional metal-oxide structures garner much attention due to unique conductive, magnetic and even superconductive functionalities they induce. Ferroelectric domain walls have been a prominent recent example because they serve as a hub for topological defects that enable unusual symmetries and are relevant for low-energy switching technologies. However, owing to the light weight of oxygen atoms and localized effects of their vacancies, the atomic-scale electrical and mechanical influence of oxygen vacancies has remained elusive. Here, stable individual oxygen vacancies were found and engineered in situ at domain walls of seminal titanate perovskite ferroics. The atomic-scale strain, electric-field, charge and dipole-moment distribution around these vacancies were characterized by combining advanced transmission electron microscopy and first-principle methodologies. 3-5 % tensile strain was observed at the immediate surrounding unit cells of the vacancies. The dipole-moment distribution around the vacancy was found to be an alternating head-to-head $-$ tail-to-tail $-$ head-to-head structure, giving rise to a quasi-linear quadrupole topology. Reduction of the nearby Ti ion as well as enhanced charging and electric-field concentration near the vacancy confirmed the quadrupole structure and illustrated its local effects on the electrical and structural properties. Significant intra-band states were found in the unit cell of the vacancies, proposing a meaningful domain-wall conductivity. Oxygen-vacancy engineering and controllable quadrupoles that enable pre-determining both atomic-scale and global functional properties offer a promising platform of electro-mechanical topological solitons and device miniaturization in metal oxides.

Oxygen vacancies stabilized 180° charged domain walls in ferroelectric hafnium oxide

Direct Atomic-Scale Visualization of the 90° Domain Walls and Their Migrations in Hf0.5Zr0.5O2 Ferroelectric Thin Films

Hybrid Functional Study on the Ferroelectricity of Domain Walls with O-vacancies in PbTiO3

Multiferroic Domain Walls in Ferroelectric PbTiO3 with Oxygen Deficiency.

Intrinsic 90° charged domain wall and its effects on ferroelectric properties

Head-to-Head and Tail-to-Tail Domain Wall in Hafnium Zirconium Oxide: A First Principles Analysis of Domain Wall Formation and Energetics

Formation and energetics of head-to-head and tail-to-tail domain walls in hafnium zirconium oxide

Ferroelectric structural transition in hafnium oxide induced by charged oxygen vacancies

Interactions of charged domain walls and oxygen vacancies in BaTiO 3 : a first-principles study

Negatively Charged In-Plane and Out-Of-Plane Domain Walls with Oxygen-Vacancy Agglomerations in a Ca-Doped Bismuth-Ferrite Thin Film

Charged Oxygen Vacancy Induced Ferroelectric Structure Transition in Hafnium Oxide

Phase-field theory study on the modulation mechanism of oxygen vacancy concentration on charged domain wall in ferroelectric thin films

Unveiling the Pinning Behavior of Charged Domain Walls in BiFeO3 Thin Films Via Vacancy Defects

The atomic-scale domain wall structure and motion in HfO2-based ferroelectrics: A first-principle study

Establishing quasi-linear quadrupole functional topology by oxygen-vacancy engineering at a ferroelectric domain wall

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Symmetry of Ferroelectric Switching and Domain Walls in Hafnium Dioxide

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Domain Wall Evolution in Hf0.5Zr0.5O2 Ferroelectrics under Field-Cycling Behavior

Domain Wall Evolution in Hf 0.5 Zr 0.5 O 2 Ferroelectrics under Field-Cycling Behavior