Abstract:The discovery of ferroelectricity in hafnium dioxide (HfO2) thin films over the past decade has revolutionized the landscape of ferroelectrics. HfO2-based ferroelectrics exhibit extraordinary switching capabilities and integrability in existing semiconductor chips, making them a promising candidate for next-generation ferroelectrics beyond the constraints of Moore’s law. However, the underlying mechanism of their ferroelectricity remains a topic of debate, possibly related to the presence of a metastable and volatile ferroelectric phase. Herein, we have achieved the successful growth of HfO2-based bulk crystals, revealing a remarkable remanent polarization of 26 μC/cm2 by a comprehensive understanding of the polymorphic engineering strategy. This result not only rivals the performances observed in extensively studied ultra-thin films but also underscores the universal feature of HfO2-based ferroelectricity. Our investigation has unveiled the intricate local structural transitions during the development of the ferroelectric phase in bulk crystals, clearly elucidating that the ferroelectric orthorhombic Pbc21 phase originates from the metastable tetragonal phase. This groundbreaking discovery clarifies the ferroelectric origin of HfO2 and provides a strategic approach for designing robust ferroelectricity. Our findings hold the potential to advance the comprehension of ferroelectric mechanisms in fluorite-structured materials, paving the way for significant strides in the subsequent development of HfO2-based nonvolatile electronic and photonic devices.

Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO$_2$

Direct Atomic-Scale Visualization of the 90° Domain Walls and Their Migrations in Hf0.5Zr0.5O2 Ferroelectric Thin Films

The atomic-scale domain wall structure and motion in HfO2-based ferroelectrics: A first-principle study

Atomic-Scale Scanning of Domain Network in the Ferroelectric HfO2 Thin Film

Ferroelectric domain nucleation and switching pathways in hafnium oxide

Progress in Computational Understanding of Ferroelectric Mechanisms in HfO$_2$

Domain Wall Evolution in Hf0.5Zr0.5O2 Ferroelectrics under Field-Cycling Behavior

Ferroelectric Domain Switching Pathways—from Grain Boundary to Grain Body

Domain Wall Evolution in Hf 0.5 Zr 0.5 O 2 Ferroelectrics under Field-Cycling Behavior

Symmetry of Ferroelectric Switching and Domain Walls in Hafnium Dioxide

Atomic-Scale Scanning of Domain Network in the Ferroelectric HfO 2 Thin Film

Progress in computational understanding of ferroelectric mechanisms in HfO 2

Phase transitions in HfO2 probed by first-principles computations

Kinetical phase transition paths and phase stability in ferroelectric HfO 2

Robust Ferroelectricity in HfO2-based Bulk Crystals Via Polymorphic Engineering

Distinguishing the Rhombohedral Phase from Orthorhombic Phases in Epitaxial Doped HfO2 Ferroelectric Films

Domain Structure of Multiferroic Oxide Thin Films with Rhombohedral Perovskite Structure

Stabilization of Competing Ferroelectric Phases of HfO 2 under Epitaxial Strain

Structural and Ferroelectric Transition in Few-Layer HfO2 Films by First Principles Calculations

3D ferroelectric phase field simulations of polycrystalline multi-phase hafnia and zirconia based ultra-thin films

Translational Boundaries as Incipient Ferrielectric Domains in Antiferroelectric PbZrO_{3}