Ferroelectric domain nucleation and switching pathways in hafnium oxide

Sebastian Calderon V,Samantha T. Jaszewski,Kyle P. Kelley,Jon F. Ihlefeld,Elizabeth Dickey

2023-11-29

Abstract:Nanoscale ferroelectrics that can be integrated into microelectronic fabrication processes are highly desirable for low-power computing and non-volatile memory devices. However, scalable novel ferroelectric materials, such as hafnium oxide (HfO2), remain in a state of development, and a clear understanding of the effects of relevant compositional and processing parameters to control their ferroelectric properties and the actual polarization switching mechanisms are still under investigation. One key fundamental knowledge gap is the polarization switching pathway in ferroelectric hafnia. To further our fundamental understanding of domain nucleation and switching, we have studied polarization switching pathways in HfO2-x thin films in real-time at the atomic scale using transmission electron microscopy. We employed differential phase contrast imaging that allows for the acquisition of both hafnium and oxygen atomic column signals and facilitates the observation of relative movement of atomic columns between both sublattices. Our results demonstrate that the switching pathway involves a transient tetragonal-like local structure, as oxygen ions shift in locations and remain within their parent hafnium polyhedra.

Materials Science

What problem does this paper attempt to address?

The paper primarily focuses on the study of ferroelectric domain nucleation and polarization reversal mechanisms in hafnium oxide (HfO2). Specifically, researchers used transmission electron microscopy (TEM) technology to observe the polarization reversal process in oxygen-deficient hafnium oxide films in real-time at the atomic scale.

### Main Research Questions

1. **Understanding Ferroelectricity:** The paper aims to further understand the ferroelectric properties of hafnium oxide, particularly the specific path of its polarization reversal. As a novel ferroelectric material, the ferroelectric performance and control methods of hafnium oxide are still in the developmental stage.

2. **Exploring Polarization Reversal Mechanisms:** Researchers focus on exploring the actual path of polarization reversal, which is a critical knowledge gap that remains unclear experimentally. Determining the actual polarization reversal path through experiments is crucial for designing new materials and utilizing these materials to develop low-power computing technologies and non-volatile memory devices.

3. **Validating Theoretical Predictions:** The paper aims to validate the polarization reversal paths proposed in previous theoretical calculations and attempts to observe a polarization reversal process through a transient tetragonal-like phase. This helps confirm the validity of theoretical predictions and provides guidance for future material design.

4. **Optimizing Material Performance:** By understanding the specific polarization reversal mechanisms, new ideas can be provided for performance optimization work such as reducing the critical electric field and improving device durability. This is very important for the widespread application of hafnium oxide in low-energy computing technologies.

Through the above research, the paper provides new insights into the polarization reversal mechanisms in ferroelectric hafnium oxide, which is of great significance for the design and development of future ferroelectric materials.