Abstract:Gallium Nitride (GaN) high-electron mobility transistors (HEMTs) are highly promising for high-frequency and high-power applications due to their superior properties, such as a wide energy bandgap and high carrier density. The performance of GaN HEMTs is significantly influenced by the interfacial states of the AlGaN barrier, and gate annealing has emerged as a key process for reducing leakage currents and enhancing DC/RF characteristics. This research investigates the impact of gate annealing on AlGaN/GaN HEMTs, focusing on two main aspects: leakage current reduction and improvements in DC and RF efficiency. Through comprehensive electrical analysis, including DC and RF measurements, the effects of gate annealing were experimentally evaluated. The results show a significant reduction in gate leakage current and noticeable improvements in DC/RF performance for the devices that underwent gate annealing. The study confirms that the annealing process can effectively enhance device performance by modifying the material properties at the gate interface.

Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance

High-Pressure Deuterium Annealing for Trap Passivation for a 3-D Integrated Structure

Improved SOI FinFETs Performance With Low-Temperature Deuterium Annealing

Low-Temperature Deuterium Annealing for HfO2/SiO2 Gate Dielectric in Silicon MOSFETs

Early Effect for 28nm HK/MG PMOSFETs after Post Deposition Annealing Treatment

Annealing Process on MOS channel Properties for Quasi‐Vertical GaN‐on‐Sapphire Trench MOSFET

Early effect exposing performance of 28nm HK/MG pMOSFETs under PDA or DPN nitridation treatment

Application of high pressure deuterium annealing for improving the hot carrier reliability of CMOS transistors

Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing

Impact of Postdeposition Annealing Ambient on the Mobility of Ge Nmosfets with 1-Nm EOT Al2O3/GeOx/Ge Gate-Stacks

Channel Surface Integrity with 2.4nm High-k Gate Dielectric under DPN Treatment at Different Annealing Temperatures

Amplification Gain of Nano-node Channel-width nMOSFETs with Thermal Annealing Treatments of DPN Processes

Lowering of Schottky Barrier Height in a Vertical Pillar MOSFET by Deuterium Annealing

Electrical Quality Of 28nm Hk/Mg Mosfets With Pda And Dpn Treatment

Effects of Forming Gas Anneal on Ultrathin InGaAs Nanowire Metal-Oxide-semiconductor Field-Effect Transistors

Defect Passivation and Reliability Enhancement by Low-Temperature-High-Pressure Hydrogenation in LDMOS With 0.13-μm Bipolar-CMOS-DMOS Technology

GIDL and gated-diode metrologies for 28nm HK/MG nMOSFETs in nitridation annealing temperatures

The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors

Deuterium process of CMOS devices: new phenomena and dramatic improvement

Low temperature atomic hydrogen annealing of InGaAs MOSFETs

Impact of Post-Nitridation Annealing on Ultra-Thin Gate Oxide Performance