Abstract:To be compatible with the mainstream nano CMOS technology and to further increase the density and to reduce power consumption of non-volatile memory, high-k dielectric will become the major technology option for next generation non-volatile memory technology. To ensure the required retention time and to maintain the scalability of floating gate memory transistor, the charge store in future memory transistor should be accompanied with the high-k insolated metal or conductive clusters, islands, or nano-particles. This work proposes a simple method to fabricate high-k isolated metal cluster array. An HfO2/Au/HfO2 stack was first grown by using atomic layer deposition (ALD) and thermal evaporation, respectively, for HfO2 and Au film deposition. After a high-temperature thermal annealing, a number of HfO2-buried Au islands with diameter of about 5 to10nm were obtained. Capacitance–voltage (C–V) measurements show that the charge storage characteristics of the Au-embedded HfO2 structure were affected greatly by the annealing conditions. Depending on the annealing temperature (it should be governed by thickness of Au layer also), the thermal annealing may lead to the formation of Au islands/clusters, the improvement of HfO2 blocking property as a result of defect removal, or the deterioration of the blocking property of HfO2 due to the crystallization of HfO2 film. Process optimization should be conducted for further improving the charge localization characteristics.

Low-Frequency Noise Analysis of the Optimized Post High-k Deposition Annealing in FinFET Technology

Improving Low-Frequency Noise in 14-Nm FinFET by Optimized High-k/Metal Gate Thermal Processing

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Numerical Investigation of Low Frequency Noise in MOSFETs with High-k Gate Stacks

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Reliability Improvement of 28-nm High- /Metal Gate-Last MOSFET Using Appropriate Oxygen Annealing

Impact of Post High-κ Deposition Anneal (PDA) and Post High-κ Capping Anneal (PCA) on the Xbti Performance in HfO2-Based FinFETs

Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs with HfO2 Gate Dielectrics

Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance

Effects of Thermal Annealing on the Charge Localization Characteristics of Hfo2/Au/Hfo2 Stack

Metal Boundary Effect Mitigation by HKMG Thermal Process Optimization in FinFET Integration Technology

Electrical Performance Improvement In Sio2/Hfsio High-K Gate Stack For Advanced Low Power Device Application

Electrical stress probing recovery efficiency of 28 nm HK/MG nMOSFETs using decoupled plasma nitridation treatment

Alleviation of Negative-Bias Temperature Instability in Si P-Finfets with ALD W Gate-Filling Metal by Annealing Process Optimization

Study on NBTI improvement of HfO<inf>2</inf>-based 14 nm P-type FinFET with post high-k deposition thermal treatment

Low-frequency noise and Coulomb scattering in Si0.8Ge0.2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics

Improved SOI FinFETs Performance With Low-Temperature Deuterium Annealing

Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis

Gate Leakage for 28 Nm Stacked HfZrO X Dielectric of P-Channel MOSFETs after Decoupled Plasma Nitridation Treatment with Annealing Temperatures

Low-Temperature Deuterium Annealing for HfO2/SiO2 Gate Dielectric in Silicon MOSFETs

Channel Surface Integrity with 2.4nm High-k Gate Dielectric under DPN Treatment at Different Annealing Temperatures