Abstract:The superior carrier mobility of SiGe alloys make them a highly desirable channel material in complementary metal-oxide-semiconductor (CMOS) transistors. Passivation of the SiGe surface and the associated minimization of interface defects between SiGe channels and high-k dielectrics continues to be a challenge for fabrication of high-performance SiGe CMOS. A primary source of interface defects is interfacial GeOx. This interfacial oxide can be decomposed using an oxygen-scavenging reactive gate metal, which nearly eliminates the interfacial oxides, thereby decreasing the amount of GeOx at the interface; the remaining ultrathin interlayer is consistent with a SiOx-rich interface. Density functional theory simulations demonstrate that a sub-0.5 nm thick SiO-richsurface layer can produce an electrically passivated HfO2/SiGe interface. To form this SiOx-rich interlayer, metal gate stack designs including Al/HfO2/SiGe and Pd/Ti/TiN/nanolaminate (NL)/SiGe (NL: HfO2-Al2O3) were investigated. As compared to the control Ni-gated devices, those with Al/HfO2/SiGe gate stacks demonstrated more than an order of magnitude reduction in interface defect density with a sub-0.5 nm SiOx-rich interfacial layer. To further increase the oxide capacitance, the devices were fabricated with a Ti oxygen scavenging layer separated from the HfO2 by a conductive TiN diffusion barrier (remote scavenging). The Pd/Ti/TiN/NL/SiGe structures exhibited significant capacitance enhancement along with a reduction in interface defect density.

Low-frequency noise and Coulomb scattering in Si0.8Ge0.2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics

Low-frequency noise in Si0.7Ge0.3 surface channel pMOSFETs with ALD HfO2/Al2O3 gate dielectrics

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Numerical Study of Flicker Noise in p-Type <formula formulatype="inline"><tex>$ \hbox{Si}_{0.7}\hbox{Ge}_{0.3}/\hbox{Si}$</tex> </formula> Heterostructure MOSFETs

Quantifying Hole Mobility Degradation in Pmosfets with a Strained-Si0.7ge0.3 Surface-Channel under an ALD TiN/Al2O3/HfAlOx/Al2O3 Gate Stack

Effects of low-temperature water vapor annealing of strained SiGe surface-channel pMOSFETs with high-κ dielectric

Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing

Influence of Surface Treatment Prior to ALD High-/Spl Kappa/ Dielectrics on the Performance of SiGe Surface-Channel Pmosfets

1/F Noise in Si and Si/sub 0.7/ge/sub 0.3/ Pmosfets

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Impact of Postdeposition Annealing Ambient on the Mobility of Ge nMOSFETs With 1-nm EOT Al 2 O 3 /GeO x /Ge Gate-Stacks

Structural and electrical characterization of Al2O3/HfO2/Al2O3 on strained SiGe

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

An experimental study of the influence of channel positioning on low-frequency noise in Si 0

MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks

Reliability Improvement of Ge Pmosfets with Al2O3 Dielectric by Ozone Post Annealing

Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs with HfO2 Gate Dielectrics

Ultralow Defect Density at Sub-0.5 Nm HfO2/SiGe Interfaces Via Selective Oxygen Scavenging

Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric

Interface Optimization and Performance Enhancement of Er2O3-Based MOS Devices by ALD-Derived Al2O3 Passivation Layers and Annealing Treatment

Growth and Characterization of Al2o3 Gate Dielectric Films by Low-Pressure Metalorganic Chemical Vapor Deposition