Abstract:Suppression of electronic defects induced by GeO x at the high- k gate oxide/SiGe interface is critical for implementation of high-mobility SiGe channels in complementary metal-oxide-semiconductor (CMOS) technology. Theoretical and experimental studies have shown that a low defect density interface can be formed with an SiO x-rich interlayer on SiGe. Experimental studies in the literature indicate a better interface formation with Al2O3 in contrast to HfO2 on SiGe; however, the mechanism behind this is not well understood. In this study, the mechanism of forming a low defect density interface between Al2O3/SiGe is investigated using atomic layer deposited (ALD) Al2O3 insertion into or on top of ALD HfO2 gate oxides. To elucidate the mechanism, correlations are made between the defect density determined by impedance measurements and the chemical and physical structures of the interface determined by high-resolution scanning transmission electron microscopy and electron energy loss spectroscopy. The compositional analysis reveals an SiO x rich interlayer for both Al2O3/SiGe and HfO2/SiGe interfaces with the insertion of Al2O3 into or on top of the HfO2 oxide. The data is consistent with the Al2O3 insertion inducing decomposition of the GeO x from the interface to form an electrically passive, SiO x rich interface on SiGe. This mechanism shows that nanolaminate gate oxide chemistry cannot be interpreted as resulting from a simple layer-by-layer ideal ALD process, because the precursor or its reaction products can diffuse through the oxide during growth and react at the semiconductor interface. This result shows that in scaled CMOS, remote oxide ALD (oxide ALD on top of the gate oxide) can be used to suppress electronic defects at gate oxide semiconductor interfaces by oxygen scavenging.

Influence of Surface Treatment Prior to ALD High-/Spl Kappa/ Dielectrics on the Performance of SiGe Surface-Channel Pmosfets

Structural and electrical characterization of Al2O3/HfO2/Al2O3 on strained SiGe

Low-frequency noise and Coulomb scattering in Si0.8Ge0.2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics

ALD metal-gate/high-k gate stack for Si and Si0.7Ge0.3 surface-channel pMOSFETs

Low-frequency noise in Si0.7Ge0.3 surface channel pMOSFETs with ALD HfO2/Al2O3 gate dielectrics

Reliability Improvement of Ge Pmosfets with Al2O3 Dielectric by Ozone Post Annealing

The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces

Atomic Layer Deposition of HfO2 Gate Dielectric with Surface Treatments and Post-metallization Annealing for Germanium MOSFETs

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

Comparative Study of Si3N4-PECVD and Al2O3-ALD Surface Passivation in T-Shaped Gate InAlAs/InGaAs InP Based HEMTs

Effect of Chemical Surface Treatments on Interfacial and Electrical Characteristics of Atomic-Layer-deposited Al2O3 Films on Ge Substrates

Effects of low-temperature water vapor annealing of strained SiGe surface-channel pMOSFETs with high-κ dielectric

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Performance enhancement of AlGaN/GaN metal-oxide-semiconductor heterojunction field-effect transistor (MOSHFET) with atomic layer deposition (ALD) of high-k HfAlO gate dielectric layer

Spectroscopic and Electrical Properties of Atomic Layer Deposition Al2O3 Gate Dielectric on Surface Pretreated Si Substrate

High Performance Atomic-Layer-Deposited \(LaLuO_3/Ge\)-on-Insulator p-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Thermally Grown \(GeO_2\) as Interfacial Passivation Layer

Engineering High- K/sige Interface with ALD Oxide for Selective GeO X Reduction.

Interface Optimization and Performance Enhancement of Er2O3-Based MOS Devices by ALD-Derived Al2O3 Passivation Layers and Annealing Treatment

Effect of Surface Treatment on Electrical Properties of GaN Metal–insulator–semiconductor Devices with Al2O3 Gate Dielectric

Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

Annealing Process on MOS channel Properties for Quasi‐Vertical GaN‐on‐Sapphire Trench MOSFET