Abstract:In this article, we delve into the reliability of various oxide/4H-SiC interfaces when exposed to elevated temperatures and carrier-trapping conditions. Our investigation primarily centers around the impact of different gate dielectric materials on the electrical characteristics of a low breakdown 4H-SiC-based MOSFET. The gate dielectrics under scrutiny include SiO2, Si3N4, AlN, Al2O3, Y2O3, and HfO2. We find that the choice of gate oxide material significantly influences the transistor's performance, with gate oxides possessing higher relative permittivity notably enhancing its characteristics. Among the materials studied, HfO2 emerges as the most promising candidate, demonstrating superior immunity behaviors in the MOSFET. However, the use of HfO2 is associated with increased gate leakage current. To mitigate this drawback, we introduce a thin interfacial layer (2 nm-thick) in the HfO2/4H-SiC MOS structure. Interestingly, two alternative gate stacked dielectrics, involving either SiO2 or Al2O3, prove effective in preserving the transistor's on-state performance metrics while limiting gate leakage current across the entire range of gate voltages examined. To validate the predictive capabilities of our modeling analysis, we compare our simulation results with experimental data from the literature, and we observe a favorable agreement. This research holds particular significance in applications employing low-power MOSFETs, where reliability and durability are as critical as performance. For instance, in the context of power optimizers for photovoltaic modules, which fall under the category of low-load and low-voltage DC–DC converters, these devices play a pivotal role in enhancing energy generation under challenging environmental conditions while ensuring long-term reliability.

Evaulation the Degradation in Nmosfets with HfO2 Gate Dielectric and Interfacial Layer by 3D Kinetic Monte-Carlo Method

Comprehensive Investigation of Multi-traps Induced Degradation in HfO2 Based nMOSFETs with Interfacial Layer by 3D-KMC Method

Reliability investigation of high-k/metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions

Investigation of Degradation under Arbitrary Bias Conditions in HfO2 Based Nanosheet Nfets by 3D Kinetic Monte-Carlo Method

Degradation Investigation of High-k/Metal Gate Nmosfets by 3D KMC with Multiple Traps Interactions

Scalability And Reliability Characteristics Of Cvd Hfo2 Gate Dielectrics With Hfn Electrodes For Advanced Cmos Applications

Trap Dynamics Based 3D Kinetic Monte Carlo Simulation for Reliability Evaluation of UTBB MOSFETs

A New Model for Two-Dimensional Electrical-Field-Dependent $v_{\rm Th}$ Instability of Pmosfets with Ultrathin DPN Gate Dielectrics

Comparison of Degradation and Recovery of SiONx and Hf-Based Dielectric under Electrical-Field Stress

Design and Simulation on Improving the Reliability of Gate Oxide in SiC CDMOSFET

Simulation and Analysis of Gate Stack DG MOSFET with Application of High-k Dielectric Using Visual TCAD

Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis

Simulation of Positive Bias Temperature Instability (PBTI) in high-k FinFET by KMC method

Investigation of PBTI Degradation in Nanosheet nFETs With HfO 2 Gate Dielectric by 3D-KMC Method

Impact of Mobility Degradation on Endurance Fatigue of FeFET with TiN/Hf0.5Zr0.5O2/SiOx/Si (MFIS) Gate Structure

Negative Bias Temperature Instability Characteristics and Degradation Mechanisms of Pmosfet with High-K/Metal Gate Stacks

Exploring High-Temperature Reliability of 4H-SiC MOSFETs: A Comparative Study of High-K Gate Dielectric Materials

A Comprehensive Analysis of Unclamped-Inductive-Switching-Induced Electrical Parameter Degradations and Optimizations for 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistor Structures

Degradation Dependency Analysis and Modeling of 1700 V Planar-Gate SiC MOSFETs under Gate Switching Instability

Numerical Analysis of 4H-SiC MOSFET Design Including High-k Gate Dielectrics for Power electronic Applications

Channel Hot-Carrier Degradation Characteristics and Trap Activities of High-K/metal Gate Nmosfets