Abstract:As the device size continues to shrink, the gate oxygen layer in MOS devices continues to become thinner, which leads to problems such as increased leakage current in conventional Si MOS devices. SiC, an important semiconductor material used in high-power devices, is not immune to the problem of premature breakdown due to the gate oxygen layer. Based on this, this paper adopts the innovative approach of replacing the conventional SiO 2 as the gate oxygen layer with the high-k material, hafnium dioxide (HfO 2 ), and continues the in-depth study on the electrical characteristics of the gate oxygen structure. In this paper, hafnium dioxide (HfO 2 ) thin films were deposited on SiC and Si substrates using the atomic layer deposition(ALD) method. The metal-insulated semiconductor (MIS) structures with Al as the upper and lower electrodes were prepared, and the leakage currents and breakdown voltage characteristics of the MOS capacitors on the two different substrates were investigated. The leakage current density of the MOS capacitor structure with SiC substrate is 10 -11 A/cm 2 ,and the breakdown voltage is about 32 V. Based on the capacitance-voltage (C-V) measurements, the frequency dependence of the movable charge at the interface of the MOS capacitor structure is investigated. The lowest interfacial defect density (D it ) of the MOS capacitive structure with SiC substrate is only of the order of 10 10 eV -1 cm -2 , while the movable charge N eff of the oxide layer of this sample is also controlled to the order of 10 13 cm -2 . It is worth mentioning that the HfO 2 /SiC structure performs better than the HfO 2 /Si structure in these electrical parameters, and the sample designed in this paper also performs better in electrical parameters than previous studies. These results undoubtedly demonstrate that the combination of High-k material (HfO 2 ) and SiC in the MOS gate oxygen layer is a promising research topic.

Characteristics of sub-1 nm CVD HfO/sub 2/ gate dielectrics with HfN electrodes for advanced CMOS applications

Characteristics of sub-1 nm CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applications

Charactcristics Of Sub-1 Nm Cvid Hfo2 Gate Dielectrics With Hfn Electrodcs For Advanccd Cmos Applications

Scalability And Reliability Characteristics Of Cvd Hfo2 Gate Dielectrics With Hfn Electrodes For Advanced Cmos Applications

Analysis of the Electrical Properties and Current Transportation Mechanism of a Metal Oxide Semiconductor (MOS) Capacitor Based on HfGdO Gate Dielectrics

A Dual-Metal Gate Integration Process for Cmos with Sub-1-Nm Eot Hfo2 by Using Hfn Replacement Gate

Improved Electrical and Reliability Characteristics of HfN--HfO/sub 2/-Gated Nmosfet with 0.95-Nm EOT Fabricated Using a Gate-First Process

Preparation of High-Quality Gate Dielectrics for Ge MOSFET's in Wet Ambients

Thermally Robust High Quality HfN/HfO 2 Gate Stack for Advanced CMOS Devices

Scalability And Reliability Of Tan/Hfn/Hfo2 Gate Stacks Fabricated By A High Temperature Process

Robust High-Quality Hfn-Hfo2 Gate Stack For Advanced Mos Device Applications

Characterization of high-kappa nanolaminates of HfO2 and Al2O3 used as gate dielectrics in pMOSFETs

Characterization of High-κ Nanolaminates of HfO 2 and Al 2 O 3 Used As Gate Dielectrics in Pmosfets

Robust High-Quality HfN–>tex<$hbox HfO_2$>/tex<Gate Stack for Advanced MOS Device Applications

Characterization of High-κ Nanolaminates of HfO2 and Al2O3 Used as Gate Dielectrics in pMOSFETs

HIGHLY SCALED CMOS DEVICE TECHNOLOGIES WITH NEW STRUCTURES AND NEW MATERIALS

Ultrathin Hfo2(Eot < 0.75nm) Gate Stack With Tan/Hfn Electrodes Fabricated Using A High-Temperature Process

The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics.

MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks

Electrical Characterization of HfO2/4H-SiC and HfO2/Si MOS Structures