Abstract:High quality thermal robust CVD-HfO/sub 2/ gate dielectrics with HfN electrodes were fabricated. The scalability of the HfN/HfO/sub 2/ gate stack and the integration issues with CMOS devices were systematically investigated. The equivalent oxide thickness (EOT) is aggressively scaled down to 0.65 nm with low gate leakage and excellent reliability characteristics. High performance HfN/HfO: gated nMOSFET with 0.95 nm EOT was fabricated by using a gate-first process compatible with standard CMOS process flow. Significantly improved effective electron mobility is achieved in the device. The improved mobility is related to a high temperature post annealing process after HfO/sub 2/ deposition in the gate-first process such as the S/D activation annealing, which could effectively reduce the charge traps in HfO/sub 2/ films. A dual metal gate integration process for HfO/sub 2/ CMOS devices is demonstrated using a HfN dummy metal layer. In the process, the dummy HfN metal gate electrode was selectively removed from high-temperature annealed HfN/HfO: gate stack by diluted hydrofluoric without causing any degradation to the underlying HfO/sub 2/ gate dielectrics. Then two other metals with appropriate work functions for dual-gate CMOS, such as Ta for n-MOS and Ni for p-MOS were then re-deposited on HfO/sub 2/ as the new gate electrodes. The resulting n- and p-MOS devices show a work function difference of -0.8 eV.

Improved Electrical and Reliability Characteristics of HfN--HfO/sub 2/-Gated Nmosfet with 0.95-Nm EOT Fabricated Using a Gate-First Process

Characteristics of sub-1 nm CVD HfO/sub 2/ gate dielectrics with HfN electrodes for advanced CMOS applications

Characteristics of sub-1 nm CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applications

Charactcristics Of Sub-1 Nm Cvid Hfo2 Gate Dielectrics With Hfn Electrodcs For Advanccd Cmos Applications

Improvement of Thermal and Mechanical Reliability of a LDMOS FET Using Graphene

Thermally Robust High Quality HfN/HfO 2 Gate Stack for Advanced CMOS Devices

Robust High-Quality Hfn-Hfo2 Gate Stack For Advanced Mos Device Applications

Robust High-Quality HfN–>tex<$hbox HfO_2$>/tex<Gate Stack for Advanced MOS Device Applications

High-Mobility Ge P- and N-Mosfets with 0.7-Nm EOT Using $\hbox{hfo}_{2}/\hbox{al}_{2}\hbox{o}_{3}/\hbox{geo}_{x}/\hbox{ge}$ Gate Stacks Fabricated by Plasma Postoxidation

Scalability And Reliability Of Tan/Hfn/Hfo2 Gate Stacks Fabricated By A High Temperature Process

Scalability And Reliability Characteristics Of Cvd Hfo2 Gate Dielectrics With Hfn Electrodes For Advanced Cmos Applications

1-Nm-thick EOT High Mobility Ge N- and P-Mosfets with Ultrathin GeOx/Ge MOS Interfaces Fabricated by Plasma Post Oxidation

Aggressive EOT Scaling of Ge Pmosfets with HfO 2 /alo X /geo X Gate-Stacks Fabricated by Ozone Postoxidation

Electrical Properties of Ge Pmosfets with Ultrathin EOT HfO2/AlOx/GeOx Gate-Stacks and NiGe Metal Source/Drain

A Dual-Metal Gate Integration Process for Cmos with Sub-1-Nm Eot Hfo2 by Using Hfn Replacement Gate

Physical Thickness 1.5-nm HfZrO Negative Capacitance NMOSFETs

Ultrathin Hfo2(Eot < 0.75nm) Gate Stack With Tan/Hfn Electrodes Fabricated Using A High-Temperature Process

HIGHLY SCALED CMOS DEVICE TECHNOLOGIES WITH NEW STRUCTURES AND NEW MATERIALS

Characterization of high-kappa nanolaminates of HfO2 and Al2O3 used as gate dielectrics in pMOSFETs

High Performance Submicron Inversion-Type Enhancement-Mode InGaAs MOSFETs with ALD Al2O3, HfO2 and HfAlO As Gate Dielectrics