Abstract:As an emerging material, graphene has attracted vast interest in solid-state physics, materials science, nanoelectronics and bioscience. Graphene has zero bandgap with its valence and conduction bands are cone-shaped and meet at the K points of the Brillouin zone. Due to its high intrinsic carrier mobility, large saturation velocity, and high on state current density, graphene is also considered as a promising candidate for high-frequency devices. To improve the reliability of graphene FETs, which include shifting the Dirac point voltage toward zero, increasing the channel mobility and decreasing the source/drain contact resistance, we optimized the device fabrication process. For CVD grown graphene, the film transfer and the device fabrication processes may produce interfacial states between graphene and the substrate and make graphene p or n-type, which shift the fermi level far away from the Dirac point. We have found that after graphene film transfer, an annealing process at 400°C under N2 ambient will shift Dirac point toward zero gate voltage. Ti/Au, Ni, and Ti/Pd/Au source/drain structures have been studied to minimize the contact resistance. According to the measured data, Ti/Pd/Au structure gives the lowest contact resistance (∼500ohmμm). By controlling the process of graphene growth, transfer and device fabrication, we have achieved graphene FETs with a field effective mobility of 16,000cm2/Vs after subtraction of contact resistance. The contact resistivity was estimated in the range of 1.1×10−6Ωcm2 to 8.8×10−6Ωcm2, which is close to state of the art III–V technology. The maximum transconductance was found to be 280mS/mm at VD=0.5V, which is the highest value among CVD graphene FETs published to date.

Improvement of Thermal and Mechanical Reliability of a LDMOS FET Using Graphene

Electrothermal-Stress Interactions of LDMOS FET Induced by DCI RF-Pulses

Suppressing Temperature Rise in AlGaN/GaN HEMT with Graphene Layers

Electro-Thermal-Stress analysis of a LDMOS FET Breakdown under High Power Microwave pulses

Analysis of Electro-Thermal-Stress Failure of the Ldmos Fet under Hpm Pulses

An Electro-Thermal Analysis of Lateral Double-diffused MOSFET(LDMOS) Using FEM

First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3

Optimizing the fabrication process for high performance graphene field effect transistors.

Systematic Investigations on the Thermal Management Performance of Graphite Thin Films for High-Electron-Mobility Transistors

Optimizing the Stability of FETs Based on Two-Dimensional Materials by Fermi Level Tuning

Lateral Heterostructure Formed by Highly Thermally Conductive Fluorinated Graphene for Efficient Device Thermal Management

Improved Contact Resistivity and Enhanced Mobility of Metal-Graphene FET by Inserting Ultra-Thin MoOx Layer at Source/drain Region

HIGHLY SCALED CMOS DEVICE TECHNOLOGIES WITH NEW STRUCTURES AND NEW MATERIALS

Graphene/Fluoropolymer Hybrid Materials With Enhancement Of All Device Properties For Improved Field-Effect Transistors

(Invited) Graphene FETs: Promises and Challenges

High Permittivity Dielectric LDMOS for Improved Performance

A Low Contact Resistance Graphene Field Effect Transistor with Single-Layer-channel and Multi-Layer-contact

Deep-submicron Graphene Field-Effect Transistors with State-of-Art Fmax

Improved Electrical and Reliability Characteristics of HfN--HfO/sub 2/-Gated Nmosfet with 0.95-Nm EOT Fabricated Using a Gate-First Process

Toward high-performance monolayer graphdiyne transistor: Strain engineering matters

Design and Simulation on Improving the Reliability of Gate Oxide in SiC CDMOSFET