An Electro-Thermal Analysis of Lateral Double-diffused MOSFET(LDMOS) Using FEM

zhen ren,Yan-Bing Shi,Wen-Yan Yin
DOI: https://doi.org/10.1109/APMC.2008.4958299
2009-01-01
Abstract:With the rapid development of microelectronics,microelectronic devices are used more extensively.Electronic systems become more sensitive to electromagnetic interference.Transistors would electronically and thermally break down in the presence of an EMP.The reliability of semiconductor devices becomes a critical issue under such disturbances.In order to investigate the reliability of semiconductor devices,a hybrid time-domain Finite Element Method(FEM) is presented in this paper to simulate the electro-thermal behavior of LDMOS under an EMP.By solving semiconductor equations and heat conduction equations,the temperature distribution of LDMOS is obtained to characterize the influence of the incident EMP.From simulation results,it is obvious that semiconductor devices have serious thermal effects under an EMP.The temperature will even rise above the melting point of semiconductor material.So semiconductor devices should be protected against EMP in electronic systems.
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