Abstract:Self-heating effects (SHEs) of multi-nanosheet FET (mNS-FET) at the 3-nm technology node were analyzed at the device and circuit level considering the introduction of punchthrough-stopper (PTS) doping and bottom oxide (BO), which are substrate processes to reduce leakage current. Changes in the heat path according to the back-end-of-line (BEOL) configuration and package type were also considered. After optimizing the PTS doping and BO process through six case analyses using three-dimensional (3-D) TCAD simulations, SHE characteristics were investigated. As a result, the channel temperature risen due to SHE was larger when BO was applied than when BO was not applied, and that the face-down package was more effective in heat dissipation than the face-up package. Next, the SHE behavior during dynamic operation of logic and analog circuits was analyzed through SPICE modeling, and the effect of this on circuit performance and reliability was analyzed. As a result, in the logic ring oscillator circuit, the SHE shows a slight AC performance degradation of ~1.3%, but in terms of reliability, it causes a decrease in the lifetime of 15.1%–22.1%. In the two types of analog circuits, the possibility of circuit malfunction can be confirmed by SHE, and in terms of reliability, it causes a reduction in lifetime of 53.5%–89.9%. Therefore, it is expected that device and circuit design that can reduce SHE are required in consideration of the various processes analyzed in this work.

Electrothermomechanical analysis of partially insulated field-effect transistors using hybrid nonlinear finite element method

Concurrent Analysis of Self-Heating Effect and Thermal Stress in Partially Insulated Field Effect Transistors (Pifets)

Electrothermal characterization of SOI FinFETs

An Electro-Thermal Analysis of Lateral Double-diffused MOSFET(LDMOS) Using FEM

A comparative study on electrothermal characteristics of nanoscale multiple gate MOSFETs.

Transient Electrothermal Analysis of Multilevel Interconnects in the Presence of ESD Pulses Using the Nonlinear Time-Domain Finite-Element Method

Analysis of Electro-Thermal-Stress Failure of the Ldmos Fet under Hpm Pulses

Electrothermal-Stress Interactions of LDMOS FET Induced by DCI RF-Pulses

Electro-Thermo-Mechanical Investigation On Multi-Level Interconnects In The Presence Of An Esd Pulse

Numerical investigation on thermal characteristics of GaN HFETs for high power applications

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Theoretical Study of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in P-Type Ultrathin Body-FinFET by Multiphysics Simulation

High-Temperature Stability Analysis of SOI-MOSFETs Characteristics Based on SPTI Model

Investigation of Self-Heating Effects in UTBB FD-SOI MOSFETs by a Modified Thermal Conductivity Model

PBTI and HCI Degradations of Ultrathin Body InGaAs-On-Insulator Nmosfets Fabricated by Wafer Bonding

Analysis of Self-Heating Effects in Multi-Nanosheet FET Considering Bottom Isolation and Package Options

The Heat Dissipation Path of Self-Heating Effects for the SOI MOSFET by Considering the BOX Layer and the TiN Barrier Layer

Analysis and Modeling of Geometry Dependent Thermal Resistance in Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Numerical simulation and analytical modelling of self-heating in FDSOI MOSFETs down to very deep cryogenic temperatures

Impact of Self-Heating Effects on Nanoscale Ge P-Channel FinFETs with Si Substrate

Investigation and Subcircuit Modeling of Self-Heating in PDSOI NFETs at Cryogenic Temperatures Using Pulsed I – V Technique for Co-Integrated Quantum Technologies